Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sandra Clur-Ruffenach"'
Autor:
Olivier Briot, C. Pinquier, Bernard Gil, Sandra Clur-Ruffenach, J. Frandon, F. Demangeot, B. Maleyre
Publikováno v:
physica status solidi (c). 1:1425-1428
We report the observation of a broad absorption in the 1.25 eV region that is typical of thin InN films. Such a feature we attribute to light absorption at the energy of the fundamental direct band gap of InN, while we attribute the low energy 650–
Autor:
C. Pinquier, F. Demangeot, Sandra Clur-Ruffenach, Bernard Gil, B. Maleyre, Miguel Gaio, J. Frandon, Olivier Briot
Publikováno v:
MRS Proceedings. 831
Highly n-doped InN layers are investigated by means of Raman scattering: a strong mode is evidenced near the frequency of the A1(LO) phonon, despite the high conductivity of the films. This observation is interpreted assuming the breakdown of the wav
Autor:
M. Caumont, Bernard Gil, F. Demangeot, Sandra Clur-Ruffenach, B. Maleyre, C. Pinquier, J. Frandon, Olivier Briot
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2003, 68, pp.245308. ⟨10.1103/PhysRevB.68.245308⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2003, 68, pp.245308. ⟨10.1103/PhysRevB.68.245308⟩
We present an experimental work on the Raman analysis of single InN dots grown by metal-organic vapor phase epitaxy on GaN buffer layer. InN islands of controlled sizes have been fabricated by taking advantage of the Stranski-Krastanov growth mode. A
Autor:
J. Frandon, F. Demangeot, C. Pinquier, M. Caumont, Olivier Briot, Bernard Gil, Sandra Clur-Ruffenach, B. Maleyre
Publikováno v:
MRS Proceedings. 798
We presented an experimental work on InN nanostructures grown on a GaN buffer layer deposited on sapphire (0001) by Metal Organic Vapor Phase Epitaxy. InN islands of controlled sizes were fabricated by using specific growth conditions and taking adva