Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Sandra Benter"'
Autor:
Sandra Benter, Adam Jönsson, Jonas Johansson, Lin Zhu, Evangelos Golias, Lars-Erik Wernersson, Anders Mikkelsen
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract Local geometric control of basic synthesis parameters, such as elemental composition, is important for bottom-up synthesis and top-down device definition on-chip but remains a significant challenge. Here, we propose to use lithographically d
Externí odkaz:
https://doaj.org/article/8d06ecb792ef4b69aabc01e45761b456
Autor:
Sandra Benter, Yi Liu, Renan Da Paixao Maciel, Chin Shen Ong, Lassi Linnala, Dong Pan, Austin Irish, Yen-Po Liu, Jianhua Zhao, Hongqi Xu, Olle Eriksson, Rainer Timm, Anders Mikkelsen
Publikováno v:
Nanoscale.
First experimental study of 2D Bi incorporation into InAs WZ nanosheets in comparison to ZB bulk samples and DFT calculations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a15cab78c5229fc750229e3a58d33ae
https://doi.org/10.1039/d3nr00454f
https://doi.org/10.1039/d3nr00454f
Autor:
Yi Liu, Sandra Benter, Chin Shen Ong, Renan P. Maciel, Linnéa Björk, Austin Irish, Olle Eriksson, Anders Mikkelsen, Rainer Timm
Two-dimensional (2D) topological insulators have fascinating physical properties which are promising for applications within spintronics. In order to realize spintronic devices working at room temperature, materials with a large nontrivial gap are ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::448f071feba04b59e8c4de0eb0c4f58b
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-501314
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-501314
Autor:
Alexander Björling, Ella Sanders, Sandra Benter, Simone Sala, Austin Irish, Lucas L.A.B. Marçal, Rainer Timm, Amnon Rothman, Jesper Wallentin, Zhaojun Zhang, Eva L. Unger, Ernesto Joselevich, Eitan Oksenberg, Anders Mikkelsen, Dmitry Dzhigaev, Susanna Hammarberg
Publikováno v:
Physical Review Materials
Ferroelectric and ferroelastic domains have been predicted to enhance metal halide perovskite (MHP) solar cell performance. While the formation of such domains can be modified by temperature, pressure, or strain, established methods lack spatial cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33a4ff49161bef9936229b78cc2686f6
https://doi.org/10.1103/physrevmaterials.5.l063001
https://doi.org/10.1103/physrevmaterials.5.l063001
Autor:
Mattias Borg, Mamidala Saketh Ram, Rainer Timm, Jisheng Pan, Anders Mikkelsen, Sandra Benter, Karl-Magnus Persson, Giulio D'Acunto, Zhihua Yong, Lars-Erik Wernersson, Zhongshan Li, Yi Liu
Publikováno v:
Yong, Z, Persson, K M, Saketh Ram, M, D'Acunto, G, Liu, Y, Benter, S, Pan, J, Li, Z, Borg, M, Mikkelsen, A, Wernersson, L E & Timm, R 2021, ' Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO 2 RRAM via TiN bottom electrode and interface engineering ', Applied Surface Science, vol. 551, 149386 . https://doi.org/10.1016/j.apsusc.2021.149386
Resistive random access memory (RRAM) technologies based on non-volatile resistive filament redox switching oxides have the potential of drastically improving the performance of future mass-storage solutions. However, the physico-chemical properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b198a6aee4af2d540787a74b0dbf1dc
https://doi.org/10.1016/j.apsusc.2021.149386
https://doi.org/10.1016/j.apsusc.2021.149386