El Aprendizaje Organizacional como respuesta al cambio. Su relación con el desarrollo,comportamiento y la comunicación organizacional: una visión general de las empresas de comercio y servicio en la ciudad de Puebla

Autor: Sandoval Téllez, María José

Este trabajo de investigación se realizó con el afán de conocer los factores que han hecho del Aprendizaje Organizacional (AO), una de las disciplinas más socorridas y exitosas del managament actual, la cual es utilizada para desarrollar mejores

Externí odkaz: http://catarina.udlap.mx/u_dl_a/tales/documentos/lco/sandoval_t_mj/

In situ formation of inhibitor species through catalytic surface reactions during area-selective atomic layer deposition of TaN.

Autor: Merkx MJM; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands., Tezsevin I; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands., Yu P; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands., Janssen T; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands., Heinemans RHGM; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands., Lengers RJ; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands., Chen JR; Intel Corporation, Hillsboro, Oregon 97124, USA., Jezewski CJ; Intel Corporation, Hillsboro, Oregon 97124, USA., Clendenning SB; Intel Corporation, Hillsboro, Oregon 97124, USA., Kessels WMM; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands., Sandoval TE; Department of Chemical and Environmental Engineering, Universidad Técnica Federico Santa María, Santiago 2340000, Chile., Mackus AJM; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.

Publikováno v: The Journal of chemical physics [J Chem Phys] 2024 May 28; Vol. 160 (20).

Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al 2 O 3 with a Series of Al(CH 3 ) x Cl 3- x and Al(C y H 2 y +1 ) 3 Precursors.

Autor: Oh IK; Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.; Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, South Korea., Sandoval TE; Chemical and Environmental Engineering Department, Universidad Técnica Federico Santa María, Santiago 8940000, Chile., Liu TL; Department of Material Science and Engineering, Stanford University, Stanford, California 94305, United States., Richey NE; Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States., Nguyen CT; Department of Material Science Engineering, Incheon National University, Incheon 21999, South Korea., Gu B; Department of Material Science Engineering, Incheon National University, Incheon 21999, South Korea., Lee HB; Department of Material Science Engineering, Incheon National University, Incheon 21999, South Korea., Tonner-Zech R; Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Linnéstraße 2, Leipzig 04103, Germany., Bent SF; Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.

Publikováno v: Journal of the American Chemical Society [J Am Chem Soc] 2022 Jul 06; Vol. 144 (26), pp. 11757-11766. Date of Electronic Publication: 2022 Jun 06.

Adsorption of Homotrifunctional 1,2,3-Benzenetriol on a Ge(100)-2 × 1 Surface.

Autor: Sandoval TE; Department of Chemical Engineering, Stanford University , 443 Via Ortega, Stanford, California 94305, United States., Bent SF; Department of Chemical Engineering, Stanford University , 443 Via Ortega, Stanford, California 94305, United States.

Publikováno v: Langmuir : the ACS journal of surfaces and colloids [Langmuir] 2017 Sep 05; Vol. 33 (35), pp. 8716-8723. Date of Electronic Publication: 2017 Jun 02.

Unidirectional Adsorption of Bifunctional 1,4-Phenylene Diisocyanide on the Ge(100)-2 × 1 Surface.

Autor: Shong B; Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305, United States., Sandoval TE; Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305, United States., Crow AM; Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305, United States., Bent SF; Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305, United States.

Publikováno v: The journal of physical chemistry letters [J Phys Chem Lett] 2015 Mar 19; Vol. 6 (6), pp. 1037-41. Date of Electronic Publication: 2015 Mar 10.