Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Sandhya Kattayat"'
Autor:
Syed Firoz Haider, Upendra Kumar, Sandhya Kattayat, Smitha Josey, M. Ayaz Ahmad, Saral K. Gupta, Rakesh Sharma, Mohammed Ezzeldien, P.A. Alvi
Publikováno v:
Results in Optics, Vol 5, Iss , Pp 100138- (2021)
A type-II (with broken bandgap) W-shaped nano-heterostructure having layers combination of AlSb, InAs and GaAsSb compound semiconductors has been proposed which can be utilized as high intensity lasing source in MIR (mid infrared region). For this he
Externí odkaz:
https://doaj.org/article/c11bada68676484497958ec487e08def
Publikováno v:
Materials Today: Proceedings. 80:549-551
Autor:
Divyanshi Sharma, Garima Bhardwaj, Sandhya Kattayat, Harish Kumar Sublania, B. L. Choudhary, P. A. Alvi
Publikováno v:
2ND INTERNATIONAL CONFERENCE ON MATERIALS FOR ENERGY AND ENVIRONMENT 2020.
Gradient of optical gain with uni-axial and bi-axial pressure on GaAsSb/InAs/AlSb QW heterostructure
Publikováno v:
2022 5th International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT).
Autor:
Richa Dolia, A. M. Quraishi, Sandhya Kattayat, Smitha Josey, Saurabh Dalela, Mohammed Ezzeldien, P. A. Alvi
Publikováno v:
Optical and Quantum Electronics. 54
Autor:
Syed Firoz Haider, A.M. Quraishi, Sandhya Kattayat, Smitha Josey, Jasgurpreet Singh, Mohammed Ezzeldien, P.A. Alvi
Publikováno v:
Physica B: Condensed Matter. 663:414969
Autor:
SANDHYA KATTAYAT
Publikováno v:
2022 Advances in Science and Engineering Technology International Conferences (ASET).
Publikováno v:
Journal of Physics: Conference Series. 2426:012022
In this article an attempt has been made to determine the uni-directinal (001-direction) pressure effect on the optical gain spectra and corresponding emission wavelength of a designed type-II nano-scale heterostructure based on GaAsSb-InAs material
Publikováno v:
Journal of Physics: Conference Series. 2426:012017
In this article an attempt has been made to design the meshing structure of Alq3/Alq3:NTCDA/NPB layers based OLED and to determine the the optical characteristics such as PL (photo luminescence), emission rate, and normal spectral density. The studie
Publikováno v:
Semiconductors. 53:1584-1592
Compositional variations in GaAs based ternary alloys have exhibited wide range alterations in electronic properties. In the present paper, first-principles study of GaAsxSb1 – x ternary alloys have been presented and discussed. Density functional