Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Sandeep Louis D'Souza"'
Autor:
Adrian Tang, Sandeep Louis D'Souza, Frank Hsiao, Roc Berenguer, Mau-Chung Frank Chang, Sai-Wang Tam
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 60:457-461
A 10-bit 2-GS/s mixed-signal baseband (BB) circuit, which enables a self-healing 60-GHz 4-Gb/s radio-on-chip implemented in a 65-nm complementary metal-oxide semiconductor, is described. The BB circuit autonomously senses and optimizes transmitter (T
Publikováno v:
IEEE Electron Device Letters. 21:30-33
Recently, a new random telegraph signal (RTS) noise model for the drain current fluctuations (/spl Delta/I/sub d/) associated with single-carrier trapping and detrapping has been developed from a flat-hand voltage perturbation (/spl Delta/V/sub fb/)
Autor:
Hao Wu, Mandy Tang, I-Ning Ku, Adrian Tang, Mike Pham, Derek Yang, Frank Hsiao, Jenny Yi-Chun Liu, Gabriel Virbila, Sandeep Louis D'Souza, Mau-Chung Frank Chang, Yen-Hsiang Wang, David Murphy, Yi-Cheng Wu, Ning-Yi Wang, Charles Chien, Yen-Cheng Kuan, Qun Jane Gu
Publikováno v:
ISSCC
The available ISM band from 57–65GHz has become attractive for high-speed wireless applications including mass data transfer, streaming high-definition video and even biomedical applications. While silicon based data transceivers at mm-wave frequen
Autor:
Sudhakar Pamarti, Tirdad Sowlati, Hossein Zarei, Sandeep Louis D'Souza, Bipul Agarwal, Roc Berenguer, Frank Chang
Publikováno v:
ISCAS
A programmable baseband anti-alias filter (AAF) for a passive-mixer-based, 1.8V, SAW-less, multi-band, multi-mode WEDGE (WCDMA/HSUPA/EGPRS) cellular transmitter (TX) is described. This paper presents an AAF which results in ultra-low, −170dBc/Hz, r
Autor:
Yong He, Shahrzad Tadjpour, Mohamed El Said, Thomas Obkircher, Doris Ching, Behzad Saeidi, Jaleh Komaili, Nader Damavandi, Stephane Richard Marie Wloczysiak, Aravind Loke, Hasan Akyol, Bala Ramachandran, Utku Seckin, Amir Mahjoob, Masoud Kahrizi, Joshua Cho, Aaron Paff, Dean A. Badillo, Georgi Taskov, Wei-Hong Chen, Dan Shum, David Guss, Dmitriy Rozenblit, Feng Shi, Yunyoung Choi, Hossein Zarei, Martin Vadkerti, Bipul Agarwal, Tom Valencia, Sandeep Louis D'Souza, Engin Pehlivanoglu, Elias Dagher, John E. Vasa, Domino William J, Raja Pullela, Hamid R. Amir Firouzkouhi, Gregory Williams, Chieh-Yu Hsieh, Suhanthan Rajendra, Imtiyaz Ron, Darioush Agahi, Tirdad Sowlati
Publikováno v:
ISSCC
There has been an increased demand for 3G cell phones that support multiple bands of operation and are backward compatible with the 2G/2.5G standard to provide coverage where 3G networks have not yet been fully deployed. The transceiver design for su
Publikováno v:
Applied Physics Letters. 70:475-477
A simple technique to measure the minority carrier mobility using a bipolar junction transistor is demonstrated. By fixing the base-emitter voltage, the carrier injection into the base is constant. The collector current is then monitored as a functio
Autor:
M. Matloubian, Hong Wu, Aniruddha Joshi, Suryanarayana Shivakumar Bhattacharya, P. Sherman, P. Kempf, Li-Ming Hwang, S. Martin, Sandeep Louis D'Souza
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
1/f-noise measurement results on thin and thick gate oxide MOSFETs fabricated in a dual gate thickness CMOS process technology have been reported in this work. The impact of gate oxide nitridation on 1/f noise has been separated from the effect of a
Autor:
S. Martin, Huinan Guan, M. Matloubian, G. Claudius, G. Compton, Guann-Pyng Li, Sandeep Louis D'Souza
Publikováno v:
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
In this work, BSIM3 compatible 1/f and RTS noise models have been developed. These new formulations are based upon the effects of band-bending fluctuations associated with single carrier trapping. The new model may be used to determine the oxide trap