Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Sandeep Krishna Thirumala"'
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 30:365-378
In this article, we explore the design of energy-efficient intermittently powered systems (IPSs) using reconfigurable-ferroelectric transistors (R-FEFETs). Utilizing the dynamic tunability between volatile and nonvolatile modes of operation in R-FEFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56fad97af802c18f6947ff7dcc81af4c
https://doi.org/10.1109/tvlsi.2021.3125248
https://doi.org/10.1109/tvlsi.2021.3125248
Autor:
Ali Khakifirooz, Eduardo Anaya, Sriram Balasubrahrmanyam, Geoff Bennett, Daniel Castro, John Egler, Kuangchan Fan, Rifat Ferdous, Kartik Ganapathi, Omar Guzman, Chang Wan Ha, Rezaul Haque, Vinaya Harish, Majid Jalalifar, Owen W. Jungroth, Sung-Taeg Kang, Golnaz Karbasian, Jee-Yeon Kim, Siyue Li, Aliasgar S. Madraswala, Srivijay Maddukuri, Amr Mohammed, Shanmathi Mookiah, Shashi Nagabhushan, Binh Ngo, Deep Patel, Sai Kumar Poosarla, Naveen V. Prabhu, Carlos Quiroga, Shantanu Rajwade, Ahsanur Rahman, Jalpa Shah, Rohit S. Shenoy, Ebenezer Tachie Menson, Archana Tankasala, Sandeep Krishna Thirumala, Sagar Upadhyay, Krishnasree Upadhyayula, Ashley Velasco, Nanda Kishore Babu Vemula, Bhaskar Venkataramaiah, Jiantao Zhou, Bharat M. Pathak, Pranav Kalavade
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::177753a2ce8bb9f42c2ea9a8a3d32f41
https://doi.org/10.1109/isscc42615.2023.10067616
https://doi.org/10.1109/isscc42615.2023.10067616
Publikováno v:
IEEE Transactions on Electron Devices. 68:5335-5339
Reconfigurable ferroelectric transistor (R-FEFET) is a variant of a ferroelectric transistor (FEFET), which utilizes two asymmetrically sized gate stacks to achieve voltage-controlled modulation in hysteresis and dynamic reconfigurability between vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b08a84a289015ab2017f7fbd34bdffc
https://doi.org/10.1109/ted.2021.3109569
https://doi.org/10.1109/ted.2021.3109569
Autor:
Abdullah Ash Saki, Mahabubul Alam, Swaroop Ghosh, Sumeet Kumar Gupta, Sandeep Krishna Thirumala, Sung Hao Lin
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 66:4219-4229
In this paper, we propose two ferroelectric FET (FEFET)-based non-volatile flip-flops (NVFFs). The proposed NVFFs can handle both controlled and automatic per-cycle backup to address sudden power failure. FE layer can be either positively polarized o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d27fe474a967f92966ca89fd71b2ddee
https://doi.org/10.1109/tcsi.2019.2927347
https://doi.org/10.1109/tcsi.2019.2927347
Publikováno v:
IEEE Transactions on Electron Devices. 66:2780-2788
In Part I, we proposed reconfigurable ferroelectric transistors (R-FEFETs) with a unique property of dynamic modulation between the volatile (logic) and nonvolatile (memory) modes of operation with the help of a control signal. They showcase excellen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f436abdd728659192de7d9794e46bb74
https://doi.org/10.1109/ted.2019.2912562
https://doi.org/10.1109/ted.2019.2912562
Publikováno v:
IEEE Transactions on Electron Devices. 66:2771-2779
In this paper, we propose a novel reconfigurable ferroelectric FET (R-FEFET), which can reconfigure its operation between volatile and nonvolatile modes during run-time by dynamically modulating its hysteresis. The R-FEFET comprises of two gates with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7132bb746e0e21a5050442e4d46fe33a
https://doi.org/10.1109/ted.2019.2897960
https://doi.org/10.1109/ted.2019.2897960
Autor:
Sandeep Krishna Thirumala, Atanu K. Saha, Niharika Thakuria, Byunghoo Jung, Sumeet Kumar Gupta
Publikováno v:
IEEE Transactions on Electron Devices. 66:2415-2423
We propose the application of ferroelectric (FE)-based transistors, viz., negative capacitance FET (NCFET) and Hysteretic ferroelectric FET (FEFET) in the design of coupled oscillators. The proposed oscillator utilizes hysteretic inverter voltage tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5983ddc2d7e02da85ef4790fb0d8a7cb
https://doi.org/10.1109/ted.2019.2902107
https://doi.org/10.1109/ted.2019.2902107
Publikováno v:
ICCD
Intermittently Powered Systems (IPS) have an ability to sustain computation progress across multiple power cycles in the presence of unreliable and sporadic harvested energy. However, with the emergence of data-intensive applications to be processed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb9de5b21ce899aa9c3117d06055bea0
https://doi.org/10.1109/iccd50377.2020.00068
https://doi.org/10.1109/iccd50377.2020.00068
Autor:
Sandeep Krishna Thirumala, Atanu K. Saha, Saptarshi Das, Daniel S. Schulman, Sumeet Kumar Gupta, Niharika Thakuria
Publikováno v:
DRC
Among several non-volatile memories (NVMs), ferroelectric (FE) based memories show distinct advantages due to electric field ( E )-driven low-power write [1] - [2] . However, there are other concerns in FE based NVMs (such destructive read in FERAMs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b0b30b30d2ec2316e0a277bcd8cee02
https://doi.org/10.1109/drc50226.2020.9135172
https://doi.org/10.1109/drc50226.2020.9135172
Autor:
Karam Cho, Sandeep Krishna Thirumala, Niharika Thakuria, Sumeet Kumar Gupta, Xiangkai Liu, Zhihong Chen
Publikováno v:
DRC
By virtue of the broken inversion symmetry and preserved time-reversal symmetry in monolayer WSe 2 , electrons from K and K’ valleys exhibit opposite spins [1] . Thus, when charge current ( I C ) flows, transverse spin currents ( I S ) are generate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34d33cdecfa556a3df7a6929180a6727
https://doi.org/10.1109/drc50226.2020.9135153
https://doi.org/10.1109/drc50226.2020.9135153