Puzzling robust 2D metallic conductivity in undoped β-Ga 2 O 3 thin films

Autor: Chikoidze, E, Rogers, DJ, Teherani, FH, Rubio, C, Sauthier, G, Von Bardeleben, HJ, Tchelidze, T, Ton-That, C, Fellous, A, Bove, P, Sandana, EV, Dumont, Y, Perez-Tomas, A

© 2018 Elsevier Ltd Here, we report the analogy of an extremely stable topological-like ultra-wide bandgap insulator, a solid that is a pure insulator in its bulk but has a metallic conductive surface, presenting a two-dimensional conductive channel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______363::9ba5911cd3de3921f8c762df0070eec2
https://hdl.handle.net/10453/136460

Author Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface.

Autor: Choi S; School of Mathematical and Physical Science, University of Technology Sydney, Broadway, PO Box 123, NSW 2007, Australia., Rogers DJ; Nanovation, 8 Route de Chevreuse, 78117, Châteaufort, France., Sandana EV; Nanovation, 8 Route de Chevreuse, 78117, Châteaufort, France., Bove P; Nanovation, 8 Route de Chevreuse, 78117, Châteaufort, France., Teherani FH; Nanovation, 8 Route de Chevreuse, 78117, Châteaufort, France., Nenstiel C; Institut für Festkörperphysik, Technische Universität Berlin, 10623, Berlin, Germany., Hoffmann A; Institut für Festkörperphysik, Technische Universität Berlin, 10623, Berlin, Germany., McClintock R; Center for Quantum Devices, ECE Department, Northwestern University, Evanston, IL, 60208, USA., Razeghi M; Center for Quantum Devices, ECE Department, Northwestern University, Evanston, IL, 60208, USA., Look D; Semiconductor Research Centre, Wright State University, Dayton, OH, 45435, USA., Gentle A; School of Mathematical and Physical Science, University of Technology Sydney, Broadway, PO Box 123, NSW 2007, Australia., Phillips MR; School of Mathematical and Physical Science, University of Technology Sydney, Broadway, PO Box 123, NSW 2007, Australia., Ton-That C; School of Mathematical and Physical Science, University of Technology Sydney, Broadway, PO Box 123, NSW 2007, Australia. cuong.ton-that@uts.edu.au.

Publikováno v: Scientific reports [Sci Rep] 2017 Nov 16; Vol. 7 (1), pp. 15912. Date of Electronic Publication: 2017 Nov 16.

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates.

Autor: Puybaret R; Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, United States of America. CNRS, GT UMI 2958, Georgia Tech Lorraine, 2 Rue Marconi, F-57070 Metz, France., Rogers DJ, Gmili YE, Sundaram S, Jordan MB, Li X, Patriarche G, Teherani FH, Sandana EV, Bove P, Voss PL, McClintock R, Razeghi M, Ferguson I, Salvestrini JP, Ougazzaden A

Publikováno v: Nanotechnology [Nanotechnology] 2017 May 12; Vol. 28 (19), pp. 195304. Date of Electronic Publication: 2017 Mar 30.