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Publikováno v:
ECS Journal of Solid State Science and Technology. 10:014007
Using alkaline chemistries for SiGe based Gate-All-Around architectures fabrication is still a challenge. This work reports a detailed study of Si to Si0.7Ge0.3 selective etching using NH4OH, TMAH and TEAH alkaline etchants. These alkaline solutions
Autor:
Sébastien Barnola, Virginie Loup, Sana Rachidi, C. Vizioz, Jean-Michel Hartmann, Alain Campo, Nicolas Posseme
Publikováno v:
Journal of Vacuum Science & Technology A. 38:033002
The fabrication of Si0.7Ge0.3 sub-10 nm nanochannels in gate-all-around devices requires a highly selective Si isotropic etching process. The etching of Si selectively to Si0.7Ge0.3 with CF4/N2/O2 downstream plasma has been investigated using various