Zobrazeno 1 - 10
of 135
pro vyhledávání: '"San-Dong Guo"'
Autor:
Che Chen Tho, Xukun Feng, Liemao Cao, Guangzhao Wang, Shi‐Jun Liang, Chit Siong Lau, San‐Dong Guo, Yee Sin Ang
Publikováno v:
Advanced Physics Research, Vol 3, Iss 7, Pp n/a-n/a (2024)
Abstract Recent discovery of ultrathick MoSi2N4(MoN)n monolayers open up an exciting platform to engineer two‐dimensional (2D) material properties via intercalation architecture. In this study, a series of ultrathick MA2N4(M'N) monolayers (M, M' =
Externí odkaz:
https://doaj.org/article/39bf2a54c16e4afbaf06b2a07b9608c8
Publikováno v:
Frontiers in Physics, Vol 11 (2023)
Externí odkaz:
https://doaj.org/article/91ff083d01e345e3b0563d7b7f02fefd
Autor:
Che Chen Tho, Chenjiang Yu, Qin Tang, Qianqian Wang, Tong Su, Zhuoer Feng, Qingyun Wu, C. V. Nguyen, Wee‐Liat Ong, Shi‐Jun Liang, San‐Dong Guo, Liemao Cao, Shengli Zhang, Shengyuan A. Yang, Lay Kee Ang, Guangzhao Wang, Yee Sin Ang
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 2, Pp n/a-n/a (2023)
Abstract 2D materials van der Waals heterostructures (vdWHs) provide a revolutionary route toward high‐performance solar energy conversion devices beyond the conventional silicon‐based pn junction solar cells. Despite tremendous research progress
Externí odkaz:
https://doaj.org/article/450fdfb845a44758a9638c061ff9c3d8
The altermagnetism caused by alternating crystal environment provides a unique opportunity for designing new type of valley polarization. Here, we propose a way to realize valley polarization in two-dimensional (2D) tetragonal altermagnetism by regul
Externí odkaz:
http://arxiv.org/abs/2409.14668
Publikováno v:
New Journal of Physics, Vol 19, Iss 11, p 113044 (2017)
Topological semimetals may have substantial applications in electronics, spintronics, and quantum computation. Recently, ZrTe was predicted as a new type of topological semimetal due to the coexistence of Weyl fermions and massless triply degenerate
Externí odkaz:
https://doaj.org/article/b7d4ff3c388246fca166f85981aee6f4
Autor:
Nurul Ahad Akil, San-Dong Guo
Publikováno v:
Journal of Electronic Materials. 52:3401-3412
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5faffdce6949878e0480eca77c38c387
https://doi.org/10.1007/s11664-023-10305-0
https://doi.org/10.1007/s11664-023-10305-0
Publikováno v:
Physical Chemistry Chemical Physics. 25:10827-10835
Based on the k·p model, at a small constant energy surface, the Rashba spin splitting has a linear relationship with momentum k, while Hexagonal warping effect and a nonzero spin projection component Sz arise at a larger constant energy surface due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a70e1d70eb3a9e04c0f869b9cd804e3
https://doi.org/10.1039/d2cp05161c
https://doi.org/10.1039/d2cp05161c
Publikováno v:
Physical Review Materials. 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b77cd69a4d19a1a41042ac620ef73658
https://doi.org/10.1103/physrevmaterials.7.044604
https://doi.org/10.1103/physrevmaterials.7.044604
Electric-field induced magnetic-anisotropy transformation to achieve spontaneous valley polarization
Publikováno v:
Journal of Materials Chemistry C. 10:16363-16369
Valleytronics has been widely investigated for providing new degrees of freedom to future information coding and processing. Here, it is proposed that valley polarization can be achieved by electric field induced magnetic anisotropy (MA) transformati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1e5ba2ec894240f647807580245337f
https://doi.org/10.1039/d2tc03293g
https://doi.org/10.1039/d2tc03293g
Publikováno v:
Physical Chemistry Chemical Physics. 24:715-723
The valley degrees of freedom of carriers in crystals is useful to process information and perform logic operations, and it is a key factor for valley application to realize the valley polarization. Here, we propose a model that the valley polarizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::198c88692ffd079e5403c2e589e028f3
https://doi.org/10.1039/d1cp05337j
https://doi.org/10.1039/d1cp05337j