Zobrazeno 1 - 10
of 18
pro vyhledávání: '"San‐Lin Liew"'
Autor:
Hsin‐Yuan Chiu, Tzu‐Ang Chao, Nathaniel S. Safron, Sheng‐Kai Su, San‐Lin Liew, Wei‐Sheng Yun, Po‐Sen Mao, Yu‐Tung Lin, Vincent Duen‐Huei Hou, Tung‐Ying Lee, Wen‐Hao Chang, Matthias Passlack, Hon‐Sum Philip Wong, Iuliana P. Radu, Han Wang, Gregory Pitner, Chao‐Hsin Chien
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Abstract Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (d
Externí odkaz:
https://doaj.org/article/262eb55fe9514f40947d0b2bde04564a
Autor:
Tzu‐Ang Chao, Chih‐Piao Chuu, San‐Lin Liew, I‐Fan Hu, Sheng‐Kai Su, Shengman Li, Shih‐Chu Lin, Vincent D.‐H. Hou, H.‐S. Philip Wong, Iuliana Radu, Wen‐Hao Chang, Gregory Pitner, Han Wang
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 6, Pp n/a-n/a (2024)
Abstract Semiconducting single‐walled carbon nanotube (CNT) is a promising candidate as a channel material for advanced logic transistors, attributed to the ultra‐thin 1‐nm cylindrical geometry, high mobility, and high carrier injection velocit
Externí odkaz:
https://doaj.org/article/0fe972dcf6f249529d0f673eb7ad5042
Autor:
Lin-Yun Huang, Ming-Yang Li, San-Lin Liew, Shih-Chu Lin, Ang-Sheng Chou, Ming-Chun Hsu, Ching-Hao Hsu, Yu-Tung Lin, Po-Sen Mao, Duen-Huei Hou, Wei-Cheng Liu, Chih-I Wu, Wen-Hao Chang, Han Wang, Lain-Jong Li, Kung-Hwa Wei
Publikováno v:
ACS Materials Letters. :1760-1766
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4a539510c21ddf1a588942e90f852c4
https://doi.org/10.1021/acsmaterialslett.3c00094
https://doi.org/10.1021/acsmaterialslett.3c00094
Autor:
Zheng Sun, Chin-Sheng Pang, Peng Wu, Terry Y.T. Hung, Ming-Yang Li, San Lin Liew, Chao-Ching Cheng, Han Wang, H.-S. Philip Wong, Lain-Jong Li, Iuliana Radu, Zhihong Chen, Joerg Appenzeller
Publikováno v:
ACS Nano. 16:14942-14950
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3f86ae0caf198d7231d30eb8ee3404c
https://doi.org/10.1021/acsnano.2c05902
https://doi.org/10.1021/acsnano.2c05902
Autor:
Zichen Zhang, Matthias Passlack, Gregory Pitner, Cheng-Hsuan Kuo, Scott T. Ueda, James Huang, Harshil Kashyap, Victor Wang, Jacob Spiegelman, Kai-Tak Lam, Yu-Chia Liang, San Lin Liew, Chen-Feng Hsu, Andrew C. Kummel, Prabhakar Bandaru
Publikováno v:
ACS Applied Materials & Interfaces. 14:11873-11882
A new generation of compact and high-speed electronic devices, based on carbon, would be enabled through the development of robust gate oxides with sub-nanometer effective oxide thickness (EOT) on carbon nanotubes or graphene nanoribbons. However, to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93eeb9d846fad5e08cc0dcce4eb0a052
https://doi.org/10.1021/acsami.1c21743
https://doi.org/10.1021/acsami.1c21743
Autor:
Fei Huang, Matthias Passlack, San Lin Liew, Zhouchangwan Yu, Qing Lin, Aein Babadi, Vincent D.-H. Hou, Paul C. McIntyre, S. Simon Wong
Publikováno v:
IEEE Electron Device Letters. 43:212-215
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5875f52e006f696f6e26a425edceeea
https://doi.org/10.1109/led.2021.3136309
https://doi.org/10.1109/led.2021.3136309
Autor:
Ning Yang, Yuxuan Cosmi Lin, Chih-Piao Chuu, Saifur Rahman, Tong Wu, Ang-Sheng Chou, San-Lin Liew, Kohei Fujiwara, Hung-Yu Chen, Junya Ikeda, Atsushi Tsukazaki, Duen-Huei Hou, Wei-Yen Woon, Szuya Liao, Shengxi Huang, Xiaofeng Qian, Jing Guo, Iuliana Radu, H.-S. Philip Wong, Han Wang
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1a6267d71a0b80680f03af12f0f367c
https://doi.org/10.1109/iedm45625.2022.10019377
https://doi.org/10.1109/iedm45625.2022.10019377
Autor:
Terry Y.T. Hung, Meng-Zhan Li, Wei Sheng Yun, Sui An Chou, Sheng-Kai Su, Edward Chen, San Lin Liew, Ying-Mei Yang, Kuang-I Lin, Vincent Hou, T.Y. Lee, Han Wang, Albert Cheng, Minn-Tsong Lin, H.-S. Philip Wong, Iuliana P. Radu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06b2730c1c45d09513aec3a887beb2b3
https://doi.org/10.1109/iedm45625.2022.10019321
https://doi.org/10.1109/iedm45625.2022.10019321
Autor:
Ang-Sheng Chou, Yu-Tung Lin, Yuxuan Cosmi Lin, Ching-Hao Hsu, Ming-Yang Li, San-Lin Liew, Sui-An Chou, Hung-Yu Chen, Hsin-Yuan Chiu, Po-Hsun Ho, Ming-Chun Hsu, Yu-Wei Hsu, Ning Yang, Wei-Yen Woon, Szuya Liao, Duen-Huei Hou, Chao-Hsin Chien, Wen-Hao Chang, Iuliana Radu, Chih-I Wu, H.-S. Philip Wong, Han Wang
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9467739def02edf3a3e51a87ec0b3f5
https://doi.org/10.1109/iedm45625.2022.10019491
https://doi.org/10.1109/iedm45625.2022.10019491
First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length
Autor:
Yun-Yan Chung, Bo-Jhih Chou, Chen-Feng Hsu, Wei-Sheng Yun, Ming-Yang Li, Sheng-Kai Su, Yu-Tsung Liao, Meng-Chien Lee, Guo-Wei Huang, San-Lin Liew, Yun-Yang Shen, Wen-Hao Chang, Chien-Wei Chen, Chi-Chung Kei, Han Wang, H.-S. Philip Wong, T. Y. Lee, Chao-Hsin Chien, Chao-Ching Cheng, Iuliana P. Radu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8daad73d43b097ab7bd8fcdd9a8ca4bd
https://doi.org/10.1109/iedm45625.2022.10019563
https://doi.org/10.1109/iedm45625.2022.10019563