Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Samuel Suhard"'
Autor:
Koen Kennes, Alain Phommahaxay, Alice Guerrero, Samuel Suhard, Pieter Bex, Steven Brems, Xiao Liu, Sebastian Tussing, Gerald Beyer, Eric Beyne
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58e9e10a5889e658df1c9be39f0df5a3
https://doi.org/10.1109/ectc51906.2022.00324
https://doi.org/10.1109/ectc51906.2022.00324
Autor:
Guillaume Boccardi, Hiroaki Arimura, Roger Loo, Samuel Suhard, Daire J. Cott, Thierry Conard, Naoto Horiguchi, L.-A. Ragnarsson, V. De Heyn, Jerome Mitard, Dan Mocuta, Liesbeth Witters, H. Dekkers, D. H. van Dorp, Nadine Collaert, Kurt Wostyn
Publikováno v:
IEEE Transactions on Electron Devices. 66:5387-5392
This article reports Si-passivated Ge nFinFETs with significantly improved GmSAT/SSSAT and positive bias temperature instability (PBTI) reliability enabled by an improved replacement metal gate (RMG) high- ${k}$ last process. SiO2 dummy gate oxide (D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dd5f23cc243b67badeb99d80e2e88e1
https://doi.org/10.1109/ted.2019.2950332
https://doi.org/10.1109/ted.2019.2950332
Autor:
Dennis Bumueller, Eric Beyne, Sebastian Tussing, Alice Guerrero, Xiao Liu, Gerald Beyer, Samuel Suhard, Pieter Bex, Alain Phommahaxay, Koen Kennes
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
Laser debonding is assessed as an alternative to mechanical peel debonding in a collective hybrid bonding flow. Potential risks associated with the laser, such as the UV-photon energy, thermal energy and mechanical/acoustic energy are evaluated both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5e107108dceac22a45be0f8f251c9b4
https://doi.org/10.1109/ectc32696.2021.00334
https://doi.org/10.1109/ectc32696.2021.00334
Autor:
Samuel Suhard, Koen Kennes, Gerald Beyer, Jash Patel, Huma Ashraf, Anne Jourdain, Chris Bolton, Ferenc Fodor, Pieter Bex, Lieve Teugels, Eric Beyne, Edward Walsby, Richard Barnett, Alain Phommahaxay, Douglas Charles La Tulipe
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
In this paper, a collective hybrid bonding of a die to wafer integration using glass wafer is demonstrated. The key process steps such as thinning on glass, carrier preparation, CMP die population and wafer to wafer bonding are discussed. Die to wafe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f1502b1367a490a60f183dde3dd5130
https://doi.org/10.1109/ectc32696.2021.00325
https://doi.org/10.1109/ectc32696.2021.00325
Autor:
Samuel Suhard, Koen Kennes, Gerald Beyer, M. Liebens, Pieter Bex, Alain Phommahaxay, Eric Beyne, Andy Miller, Ferenc Fodor, John Slabbekoorn
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
In this paper, a collective hybrid bonding of a die to wafer is demonstrated. The key integration steps such as CMP, wet etch, cleaning, defect metrology, alignment optimization in die to wafer and wafer to wafer bonding tools are discussed in detail
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38b1e70493a6b30dfd70a0406c015e46
https://doi.org/10.1109/ectc32862.2020.00208
https://doi.org/10.1109/ectc32862.2020.00208
Autor:
Pieter Bex, Alain Phommahaxay, G. Beyer, Serena Iacovo, Thomas Schmidt, Samuel Suhard, Koen Kennes, Eric Beyne, Alice Guerrero, Olga Bauder, Xiao Liu
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
Current roadblocks within the collective die-to-wafer bonding flow, limiting die-transfer yield and throughput, are identified and discussed. Based on the obtained assessment a new carrier system is introduced. The use of the ultra-soft and highly-UV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ce6dfb5ba9a8b5862216f3717a2a166
https://doi.org/10.1109/ectc32862.2020.00056
https://doi.org/10.1109/ectc32862.2020.00056
Autor:
Yohei Kinoshita, Eric Beyne, Samuel Suhard, Fumihiro Inoue, Julien Bertheau, Alain Phommahaxay, Tetsuro Kinoshita, Takuya Ohashi
Publikováno v:
3DIC
Blade dicing compatible particle protective layer is investigated for feasibility study of collective Die-to- Wafer (D2W) direct bonding. Having the compatibility to blade dicing, the protective layer needs to be insoluble for de-ionized water (DIW),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aff4d6be0bc184fb91958fa02d6eb4a
https://doi.org/10.1109/3dic48104.2019.9058870
https://doi.org/10.1109/3dic48104.2019.9058870
Autor:
Jaber Derakhshandeh, Kenneth June Rebibis, Gerald Beyer, Adil Shehzad, Eric Beyne, Andy Miller, Samuel Suhard, Bernhard Wunderle, Lin Hou
Publikováno v:
2019 22nd European Microelectronics and Packaging Conference & Exhibition (EMPC).
In this paper, the oxidation protection and solder wettability is investigated after coating an organic compound 1,2,3-benzotriazole (BTAH, C 6 H 5 N 3 ) or BZT on copper UBMs. Since BZT serves as a very strong corrosion inhibitor for copper and its
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb4fef918c3f84e6b2bc8ea718b9cb23
https://doi.org/10.23919/empc44848.2019.8951885
https://doi.org/10.23919/empc44848.2019.8951885
Autor:
John Slabbekoorn, Jaber Derakhshandeh, Melina Lofrano, Julien Bertheau, Andy Miller, Lin Hou, Fumihiro Inoue, M. Honore, Fabrice Duval, Vladimir Cherman, Kenneth June Rebibis, F. Beirnaert, Gerald Beyer, G. Jamieson, Giovanni Capuz, Samuel Suhard, C. Heyvaert, Nancy Heylen, I. De Preter, Carine Gerets, Eric Beyne, T. Webers, Alain Phommahaxay, G. Van der Plas, Pieter Bex, Tom Cochet
Publikováno v:
2019 22nd European Microelectronics and Packaging Conference & Exhibition (EMPC).
In this paper a novel solder-based die-to-die or wafer-to-wafer interconnect approach is introduced. This technique allows for microbump interconnects with different diameters on a single die and allows for pitch scaling down to 5μm A metal damascen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::023c4836b336797eba252150c2054bc7
https://doi.org/10.23919/empc44848.2019.8951856
https://doi.org/10.23919/empc44848.2019.8951856
Autor:
Daire J. Cott, Stephan Brus, K. Kenis, Dan Mocuta, Jerome Mitard, D. H. van Dorp, Nadine Collaert, Hiroaki Arimura, E. Capogreco, Roger Loo, A. Opdebeeck, Guillaume Boccardi, V. De Heyn, L.-A. Ragnarsson, Liesbeth Witters, Kurt Wostyn, Frank Holsteyns, Thierry Conard, Samuel Suhard, Naoto Horiguchi
Publikováno v:
2019 Symposium on VLSI Technology.
We have demonstrated Ge nFinFETs with a record high $\text{G}_{\text{mSA}\Gamma}/\text{SS}_{\text{SAT}}$ and PBTI reliability by improving the RMG high-k last process. The SiO 2 dummy gate oxide (DGO) deposition and removal processes have been identi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::372d860fefbeb4848dc647da0126fe8d
https://doi.org/10.23919/vlsit.2019.8776535
https://doi.org/10.23919/vlsit.2019.8776535