Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Samuel Matta"'
Autor:
J. Aaron Hogan, Joanne M. Sharpe, Ashley Van Beusekom, Sarah Stankavich, Samuel Matta Carmona, John E. Bithorn, Jamarys Torres‐Díaz, Grizelle González, Jess K. Zimmerman, Aaron B. Shiels
Publikováno v:
Ecosphere, Vol 13, Iss 7, Pp n/a-n/a (2022)
Abstract Tropical forest understory regeneration occurs rapidly after disturbance with compositional trajectories that depend on species availability and environmental conditions. To predict future tropical forest regeneration dynamics, we need a dee
Externí odkaz:
https://doaj.org/article/8763bfe6521b49409b78232561551260
Autor:
Hervé Chevalier, Nicholas V. L. Brokaw, Sheila E. Ward, Jess K. Zimmerman, Aaron B. Shiels, John Bithorn, Samuel Matta Carmona
Publikováno v:
Ecosphere, Vol 13, Iss 4, Pp n/a-n/a (2022)
Abstract Climate change and disturbance make it difficult to project long‐term patterns of carbon sequestration in tropical forests, but large ecosystem experiments in these forests can inform predictions. The Canopy Trimming Experiment (CTE) manip
Externí odkaz:
https://doaj.org/article/60c43f48be054d39a8d86f083ebe3810
Autor:
Julien Brault, Mohamed Al Khalfioui, Samuel Matta, Thi Huong Ngo, Sébastien Chenot, Mathieu Leroux, Pierre Valvin, Bernard Gil
Publikováno v:
Crystals, Vol 10, Iss 12, p 1097 (2020)
AlGaN based light emitting diodes (LEDs) will play a key role for the development of applications in the ultra-violet (UV). In the UVB region (280–320 nm), phototherapy and plant lighting are among the targeted uses. However, UVB LED performances s
Externí odkaz:
https://doaj.org/article/0caaaa98e2d843ebb2578ce0e8690ce2
Akademický článek
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Akademický článek
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Autor:
Thomas Frisch, Samuel Matta, Benjamin Damilano, Julien Brault, Jean Massies, Jean-Noël Aqua, Philippe Vennéguès, M. Korytov, Guido Schifani
Publikováno v:
ACS Applied Nano Materials
ACS Applied Nano Materials, American Chemical Society, 2020, 3 (5), pp.4054-4060. ⟨10.1021/acsanm.9b02546⟩
ACS Applied Nano Materials, American Chemical Society, 2020, 3 (5), pp.4054-4060. ⟨10.1021/acsanm.9b02546⟩
International audience; We exhibit both experimentally and theoretically a novel growth mode for the epi-taxy of AlGaN quantum dots (QD), where they are eventually produced without their usual surrounding wetting layer. If the generic evolution of QD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b307f1f71bb0584f8f2dabb86c05245d
https://doi.org/10.1021/acsanm.9b02546
https://doi.org/10.1021/acsanm.9b02546
Autor:
Benjamin Damilano, Pierre Valvin, Thi Huong Ngo, Mohamed Al Khalfioui, Jean-Yves Duboz, Aimeric Courville, Sébastien Chenot, Samuel Matta, Bernard Gil, Jean Massies, Mathieu Leroux, Aly Zaiter, Julien Brault
Publikováno v:
Gallium Nitride Materials and Devices XVI
SPIE OPTO
SPIE OPTO, Mar 2021, Online Only, United States. pp.16, ⟨10.1117/12.2576135⟩
Gallium Nitride Materials and Devices XVI, Mar 2021, Online Only, France. pp.16, ⟨10.1117/12.2576135⟩
SPIE OPTO
SPIE OPTO, Mar 2021, Online Only, United States. pp.16, ⟨10.1117/12.2576135⟩
Gallium Nitride Materials and Devices XVI, Mar 2021, Online Only, France. pp.16, ⟨10.1117/12.2576135⟩
International audience; Deep ultraviolet (DUV) light emitting diodes (LED) are expected to be the next generation of UV sources, offering significant advantages such as compactness, low consumption and long lifetimes. Yet, improvements of their perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6608f07996ff5aef5bd38606a6048efa
https://hal.archives-ouvertes.fr/hal-03366593
https://hal.archives-ouvertes.fr/hal-03366593
Autor:
Mohamed Al Khalfioui, Sébastien Chenot, Thi Huong Ngo, Samuel Matta, Pierre Valvin, Bernard Gil, Mathieu Leroux, Julien Brault
Publikováno v:
Crystals, Vol 10, Iss 1097, p 1097 (2020)
Crystals
Volume 10
Issue 12
Crystals, MDPI, 2020, 10 (12), pp.1097. ⟨10.3390/cryst10121097⟩
Crystals
Volume 10
Issue 12
Crystals, MDPI, 2020, 10 (12), pp.1097. ⟨10.3390/cryst10121097⟩
AlGaN based light emitting diodes (LEDs) will play a key role for the development of applications in the ultra-violet (UV). In the UVB region (280&ndash
320 nm), phototherapy and plant lighting are among the targeted uses. However, UVB LED perfo
320 nm), phototherapy and plant lighting are among the targeted uses. However, UVB LED perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0e31e489a12bc9692308ff0148f2675
https://www.mdpi.com/2073-4352/10/12/1097
https://www.mdpi.com/2073-4352/10/12/1097
Autor:
Samuel Matta, Yong-Hoon Cho, Seoung-Hwan Park, Jong-Hoi Cho, Julien Brault, Young Chul Sim, Chulwon Lee, Hwanseop Yeo, Seung-Hyuk Lim, Je-Hyung Kim, Min-Ho Jang
Publikováno v:
UV and Higher Energy Photonics: From Materials to Applications 2020.
Since III-nitride semiconductor-based ultraviolet (UV) light-emitting diodes (LEDs) are compact and efficient, they can be suggested as a substitute for conventional arc-lamps. However, reported UV LEDs focused on a narrow range of UV spectrum contra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7585884823dc887188cd022b0af7e10d
https://doi.org/10.1117/12.2570858
https://doi.org/10.1117/12.2570858
Autor:
Hao Long, Lei-Ying Ying, Samuel Matta, Zhi-Wei Zheng, Baoping Zhang, Zhongming Zheng, Julien Brault, Mathieu Leroux
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, AVS through the American Institute of Physics, 2020, 38 (4), pp.042207. ⟨10.1116/6.0000192⟩
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, AVS through the American Institute of Physics, 2020, 38 (4), pp.042207. ⟨10.1116/6.0000192⟩
To fabricate AlGaN-based ultraviolet (UV) vertical cavity surface-emitting laser diodes, a pair of distributed Bragg reflectors (DBRs) having a smooth surface is desired to have a high quality factor (Q). In this work, photoassisted chemical etching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab50c67738847102ab96a6f76a20c568
https://hal.archives-ouvertes.fr/hal-02931570
https://hal.archives-ouvertes.fr/hal-02931570