Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Samuel K. Gorman"'
Autor:
Yu-Ling Hsueh, Ludwik Kranz, Daniel Keith, Serajum Monir, Yousun Chung, Samuel K. Gorman, Rajib Rahman, Michelle Y. Simmons
Publikováno v:
Physical Review Research, Vol 5, Iss 2, p 023043 (2023)
Donor electron spin qubits hosted within nanoscale devices have demonstrated seconds-long relaxation times at magnetic fields suitable for the operation of spin qubits in silicon of B=1.5T. The relaxation rates of these qubits have been shown at mill
Externí odkaz:
https://doaj.org/article/94ab06e7f16b4e0f8b16ff4580e7bfc6
Publikováno v:
Physical Review Applied. 19
Autor:
Ludwik Kranz, Samuel K. Gorman, Brandur Thorgrimsson, Serajum Monir, Yu He, Daniel Keith, Keshavi Charde, Joris G. Keizer, Rajib Rahman, Michelle Y. Simmons
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
Phosphorus atoms in silicon offer a rich quantum computing platform where both nuclear and electron spins can be used to store and process quantum information. While individual control of electron and nuclear spins has been demonstrated, the interpla
Autor:
Daniel Keith, Yousun Chung, Ludwik Kranz, Brandur Thorgrimsson, Samuel K. Gorman, Michelle Y. Simmons
Publikováno v:
Science advances. 8(36)
State preparation and measurement of single-electron spin qubits typically rely on spin-to-charge conversion where a spin-dependent charge transition of the electron is detected by a coupled charge sensor. For high-fidelity, fast readout, this proces
Autor:
Edyta N. Osika, Samuel K. Gorman, Serajum Monir, Yu-Ling Hsueh, Marcus Borscz, Helen Geng, Brandur Thorgrimsson, Michelle Y. Simmons, Rajib Rahman
Publikováno v:
Physical Review B. 106
Autor:
Ludwik Kranz, Samuel K. Gorman, Brandur Thorgrimsson, Serajum Monir, Yu He, Daniel Keith, Keshavi Charde, Joris G. Keizer, Rajib Rahman, Michelle Y. Simmons
Publikováno v:
Advanced Materials. 35:2370039