Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Samuel J. Shin"'
Publikováno v:
Bulletin of the Korean Chemical Society. 43:227-231
Autor:
Sangmee Park, Jin-Young Lee, Dae-Woong Hwang, Jeongse Yun, Taek Dong Chung, Jae Gyeong Lee, Samuel J. Shin
Publikováno v:
Proceedings of the National Academy of Sciences. 117:32939-32946
Significance The electrochemical reaction at the insulator is extraordinary. Despite its counterintuitiveness, it is made possible by using a silicon oxide dielectric electrode as the cathode. In this study, we use such a dielectric electrode to enab
Publikováno v:
Current Opinion in Electrochemistry. 35:101054
Autor:
Taek Dong Chung, Samuel J. Shin
Publikováno v:
Chemistry, an Asian journal. 16(20)
Electrochemistry of the silicon oxide dielectric layer, a notable insulator often used as a gate oxide, is counterintuitive, but addresses fundamental questions to yield novel scientific discoveries. In this minireview, the fundamental electron trans