Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Samuel Chen Wai Chow"'
Autor:
Jia Min Ang, Putu Andhita Dananjaya, Samuel Chen Wai Chow, Gerard Joseph Lim, Chim Seng Seet, Wen Siang Lew
Publikováno v:
Nanotechnology. 34:185202
This work demonstrates oscillation frequency modulation in a NbO2-based relaxation oscillator device, in which the oscillation frequency increases with operating temperature and source voltage, and decreases with load resistance. An annealing-induced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b64e150c22870e932d6c050a233bf4ea
https://doi.org/10.1088/1361-6528/acb778
https://doi.org/10.1088/1361-6528/acb778
Autor:
Samuel Chen Wai Chow, Putu Andhita Dananjaya, Jia Min Ang, Desmond Jia Jun Loy, Jia Rui Thong, Siew Wei Hoo, Eng Huat Toh, Wen Siang Lew
Publikováno v:
Applied Surface Science. 608:155233
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::646031d3c21e34abaaea1851e9b4b098
https://doi.org/10.1016/j.apsusc.2022.155233
https://doi.org/10.1016/j.apsusc.2022.155233
Autor:
Eng Huat Toh, Desmond Jia Jun Loy, Samuel Chen Wai Chow, Kunqi Hou, Wen Siang Lew, Somsubhra Chakrabarti, Mun Yin Chee, Kuan Hong Tan, Yong Chiang Ee, Gerard Joseph Lim, Jia Min Ang, Putu Andhita Dananjaya, Jia Rui Thong
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
A multi-level state HfO 2 -based resistive switching model is reported, where the increase in stopping voltage (V stop ) and thus activation energy (E AC ) is attributed to the depletion of oxygen vacancy (V o ) concentration (n c ) during reset. Hop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c6aa34845712af4e51e99da3425e8bd
https://doi.org/10.1109/snw50361.2020.9131623
https://doi.org/10.1109/snw50361.2020.9131623
Autor:
Wen Siang Lew, Wai Cheung Law, Gerard Joseph Lim, Funan Tan, Eng Huat Toh, Desmond Jia Jun Loy, Xiao Liang Hong, Samuel Chen Wai Chow, Putu Andhita Dananjaya
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
We report hopping conduction in Pt/MgO/Cu resistive switching memory (RSM) devices predominantly in the low resistance state. Current-voltage measurements of Pt/MgO/Cu RSM devices exhibited good cycle-to-cycle variability. Promising DC endurance exce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::092bd39128878918c99581d6ee1b4cbb
https://doi.org/10.1109/edtm.2019.8731244
https://doi.org/10.1109/edtm.2019.8731244