Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Samseok Jang"'
Autor:
Jaihyung Won, Dongjin Byun, Jong-Sik Choi, Yeonhong Jee, Seungmoo Lee, Samseok Jang, Hyeon-deok Lee
Publikováno v:
Thin Solid Films. 519:6737-6740
Amorphous carbon layers (ACL) were deposited on Si (100) wafers by plasma enhanced chemical vapor deposition (PECVD) by using 1-hexene (C 6 H 12 ) as a carbon source for dry etch hard mask of semiconductor devices manufacturing process. The depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe56f0bda934c70f308ebd226dadcf68
https://doi.org/10.1016/j.tsf.2011.01.405
https://doi.org/10.1016/j.tsf.2011.01.405
Publikováno v:
Thin Solid Films. 519:6863-6867
The undoped and fluorine doped gallium tin oxide composite films are prepared by an electron cyclotron resonance metal organic chemical vapor deposition. Characteristics of structural, optical and electrical properties of the fluorine doped gallium t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa49cc1efed3430a61136e6f843acdd8
https://doi.org/10.1016/j.tsf.2011.04.048
https://doi.org/10.1016/j.tsf.2011.04.048
Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask
Publikováno v:
Journal of Crystal Growth. 326:200-204
Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69c6a3021c4bb7b39d2813e92ede5b47
https://doi.org/10.1016/j.jcrysgro.2011.01.097
https://doi.org/10.1016/j.jcrysgro.2011.01.097
Autor:
Jong-Hyeob Baek, Kwangtaek Lee, Young-Moon Yu, Samseok Jang, Jaesang Lee, Dongjin Byun, Bum-Joon Kim, Seung-Jae Lee, Junggeun Jhin
Publikováno v:
Chemical Vapor Deposition. 16:80-84
An epitaxial, laterally-overgrown (ELOG) GaN layer is deposited on a Si(111) substrate using high-dose, N+ ion implantation. ELOG GaN is deposited on a Si(111) wafer with implantation stripes by metal-organic (MO) CVD. The GaN layer on the N+ ion-imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dc9aa34a3bee31795b28cfda04cff19
https://doi.org/10.1002/cvde.200906807
https://doi.org/10.1002/cvde.200906807
Autor:
Samseok Jang, Sang-Il Kim, Kwangtaek Lee, Bum-Joon Kim, Jaesang Lee, Dongjin Byun, Junggeun Jhin
Publikováno v:
ECS Transactions. 25:169-174
Epitaxial lateral overgrowth (ELO) process has limited use in GaN devices due to the uneasiness of regrowth or the likeliness of contamination from the ELO mask, even though it is a method to reduce the dislocation density in GaN grown on sapphire su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::544cf11485479c36bff3d5cd4d583977
https://doi.org/10.1149/1.3334805
https://doi.org/10.1149/1.3334805
Publikováno v:
Journal of the Korean Physical Society. 53:3033-3037
ZnO thin lms were deposited by using atomic layer deposition with a xed purging time of the DEZinc and the H2O sources of 8 sec and an injection time of 1 sec per source. The ZnO lms were formed in the temperature range from 30 C to 300 C. The micros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19e210f3cabbcfe0eb484a7279dde3ef
https://doi.org/10.3938/jkps.53.3033
https://doi.org/10.3938/jkps.53.3033
Autor:
Jae Sung Hur, Kyung Hoon Yoon, Samseok Jang, Jae Ho Yun, Dongjin Byun, Jung Bin Song, Chang-Sik Son, Jihye Kim
Publikováno v:
Journal of the Korean Physical Society. 53:442-445
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::828c408ad8529c0b9da2f90edb6fc071
https://doi.org/10.3938/jkps.53.442
https://doi.org/10.3938/jkps.53.442
Publikováno v:
Materials Research Bulletin. 47:2888-2890
The growth of three-dimensional ZnO hybrid structures by metal-organic chemical vapor deposition was controlled through their growth pressure and temperature. Vertically aligned ZnO nanorods were grown on c-plane of sapphire substrate at 600 °C and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07f7bde097bfc60a3b45933676782bcf
https://doi.org/10.1016/j.materresbull.2012.04.099
https://doi.org/10.1016/j.materresbull.2012.04.099
Autor:
Samseok Jang, Dohan Lee, Jun-hyuck Kwon, Sang-il Kim, So young Yim, Jaesang Lee, Ji Hun Park, Dongjin Byun
Publikováno v:
Japanese Journal of Applied Physics. 51:115501
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98de28164c8552daf440a86b78a74e21
https://doi.org/10.7567/jjap.51.115501
https://doi.org/10.7567/jjap.51.115501
Autor:
Dongjin Byun, Samseok Jang, So Young Yim, Sang-Il Kim, Do-Han Lee, Jaesang Lee, Jun Hyuck Kwon, Ji Hun Park
Publikováno v:
Japanese Journal of Applied Physics. 51:115501
Epitaxial lateral overgrowth (ELO) a-plane GaN samples were successfully grown on masked sapphire (11̄02) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b97e95de2ef1361892c319df8768bafd
https://doi.org/10.1143/jjap.51.115501
https://doi.org/10.1143/jjap.51.115501