Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Samnakay, R."'
Autor:
Lacerda, M. M., Kargar, F., Aytan, E., Samnakay, R., Debnath, B., Li, J. X., Khitun, A., Lake, R. K., Shi, J., Balandin, A. A.
Publikováno v:
Applied Physics Letters, 110, 202406 (2017)
We report results of an investigation of the temperature dependence of the magnon and phonon frequencies in NiO. A combination of Brillouin - Mandelstam and Raman spectroscopies allowed us to elucidate the evolution of the phonon and magnon spectral
Externí odkaz:
http://arxiv.org/abs/1702.04366
Autor:
Volodchenkov, A. D., Ramirez, S., Samnakay, R., Salgado, R., Kodera, Y., Balandin, A. A., Garay, J. E.
Publikováno v:
Materials and Design, 125, 62 (2017)
Nanostructured permanent magnets are gaining increasing interest and importance for applications such as generators and motors. Thermal management is a key concern since performance of permanent magnets decreases with temperature. We investigated the
Externí odkaz:
http://arxiv.org/abs/1612.05174
Publikováno v:
Nano Letters, 15, 2965 (2015)
Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 K and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The C-CDW
Externí odkaz:
http://arxiv.org/abs/1503.06891
Publikováno v:
IEEE Electron Device Letters, 36, 517 (2015)
We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have adv
Externí odkaz:
http://arxiv.org/abs/1503.01823
Publikováno v:
Journal of Applied Physics, 117, 064301 (2015)
The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold
Externí odkaz:
http://arxiv.org/abs/1412.6698
Publikováno v:
Applied Physics Letters, 106, 023115 (2015)
We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film field-eff
Externí odkaz:
http://arxiv.org/abs/1411.5393
Autor:
Renteria, J., Samnakay, R., Jiang, C., Pope, T. R., Goli, P., Yan, Z., Wickramaratne, D., Salguero, T. T., Khitun, A. G., Lake, R. K., Balandin, A. A.
Publikováno v:
J. Appl. Phys., 115, 034305 (2014)
We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals
Externí odkaz:
http://arxiv.org/abs/1312.6863
Publikováno v:
Appl. Phys. Lett., 104, 153104 (2014)
We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of
Externí odkaz:
http://arxiv.org/abs/1312.6868
Autor:
Volodchenkov, A.D., Ramirez, S., Samnakay, R., Salgado, R., Kodera, Y., Balandin, A.A., Garay, J.E.
Publikováno v:
In Materials & Design 5 July 2017 125:62-68
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 6, p064301-1-064301-6, 6p, 8 Graphs