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pro vyhledávání: '"Samit Barai"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 34:379-386
This work proposes a methodology to find lithography yield detractors using Design Rule Checks (DRC) that are derived from a supervised Machine Learning (ML) model. The probability of being an outlier in layout parameter domain has a strong correlati
Publikováno v:
Materials Today: Proceedings. 2:1560-1567
Pulse Oximeter is an instrument, which non-invasively monitors the saturation of hemoglobin in arterial blood. Under normal physiological conditions, oxygen saturation ranges between 92%-100%. When saturation falls below the normal range, an unhealth
Publikováno v:
Materials Today: Proceedings. 2:A1-A4
In this research article Figures 1, 2, 3a, 3b, 4, 5 are missing in the paper, that has to be rectified with the below figures
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 18:1
With continuous downscaling of feature sizes, potentially problematic patterns (hotspots) have become a major issue in generation of optimized mask design for better printability. The lithography process sensitive patterns in a design lead to degrada
Autor:
Samit Barai, Anurag Sharma
Publikováno v:
Optics Communications. 271:81-86
We present an improved optimal variational method (Vopt) to overcome the assumption of field separability in the two orthogonal directions. The improved Vopt method is shown to give accurate results with less computational effort. The method is appli
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
Full chip resist simulation is a critical step in the lithography simulation of advanced CMOS technology nodes. The semi-empirical compact models (such as compact model 1, also known as CM1) are generally used in the semiconductor industries for resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ac5fd06c9dc308e051e0a99bc76564f
https://doi.org/10.1007/978-3-319-03002-9_9
https://doi.org/10.1007/978-3-319-03002-9_9
Autor:
Aditya Padmawar, Tamer Desouky, Samit Barai, Ramana Murthy Pusuluri, James M. Oberschmidt, Om Jaiswal
Publikováno v:
SPIE Proceedings.
Process models have been in use for performing proximity corrections to designs for placement on lithography masks for a number of years. In order for these models to be used they must provide an adequate representation of the process while also allo
Autor:
Samit Barai, Anurag Sharma
Publikováno v:
Journal of the Optical Society of America. A, Optics, image science, and vision. 26(4)
A new set of basis functions based on truncated Gaussian wavelets is proposed for optical waveguide analysis using the well-known Galerkin method. A spatially limited Gaussian wavelet train is formed by judiciously truncating the tails of Gaussian fu