Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Samir Zelmat"'
Electrostatic separation process of metal/plastic granular mixtures using a horizontal rotating disk
Publikováno v:
Particulate Science and Technology. :1-9
Autor:
Marian Bogdan Neagoe, Mohamed Elmouloud Zelmat, Amar Tilmatine, Ahmed Alibida, Farid Miloua, Lucien Dascalescu, Samir Zelmat
Publikováno v:
Particulate Science and Technology. 38:505-510
A traveling wave conveyor (TWC) is generally employed for moving high-resistivity micronized particles. In this study, a planar TWC was used to analyze the attraction force applied on metal pieces....
Publikováno v:
Journal of Electrostatics. 96:64-68
The traveling wave conveyor (TWC) which is generally used for moving high-resistivity particles is employed in this paper to analyze a magnetic attraction force applied on nonferrous metal pieces. A planar three-phase conveyor, constituted of paralle
Autor:
Sombel Diaham, Marie-Laure Locatelli, Samir Zelmat, Thierry Lebey, Sorin Dinculescu, M. Decup
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. 17:18-27
Changes in the dielectric breakdown field of polyimide (PI) films have been studied from 25 to 400°C under dc ramps. Both the area (from 0.0707 to 19.635 mm2) and thickness (from 1.4 to 6.7 ?m) dependences of the dielectric breakdown field have been
Autor:
Thierry Lebey, C. Dubois, Samir Zelmat, Sombel Diaham, Sorin Dinculescu, Benoit Schlegel, Marie-Laure Locatelli
Publikováno v:
Revue internationale de génie électrique. 12:445-459
The metallization and the characterization atmosphere influences on the dielectric properties of a polyimide (PI) material at high temperature have been studied using metal-insulator-metal (MIM) structures. Although the Au and Ag metallized structure
Publikováno v:
Revue internationale de génie électrique. 9:417-431
Cette etude porte sur l'evaluation des potentialites d'un materiau polyimide retenu pour la passivation des'composants de puissance a base de carbure de silicium, destines a fonctionner a des temperatures allant jusqu'a 400 °C. La caracterisation de
Publikováno v:
Microelectronic Engineering. 83:51-54
The operation of silicon carbide (SiC) power devices under severe conditions requires the development of thermally, electrically and chemically stable package. Passivation layer provides electrical insulation and environmental protection for the SiC
Publikováno v:
Materials Science Forum. :717-720
Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-voltage, highpower and high-temperature applications [1]. However, and among other issues, the production of advanced SiC power devices still remains limited due to some shortcom
Autor:
Zennani, Imane1,2 (AUTHOR), Zelmat, Samir1,2 (AUTHOR), Tilmatine, Amar2 (AUTHOR) atilmatine@gmail.com
Publikováno v:
Particulate Science & Technology. 2024, Vol. 42 Issue 1, p58-66. 9p.