Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Samir Meziani"'
Publikováno v:
Surface Engineering. 36:456-464
Synthesis and characterisation of silicon nanocrystals (Si NCs) materials are carried out. We investigated the morphological and structural Si NCs embedded in the silicon nitride (SiNx) mat...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439396fdd4166fc8b7beb811f114896f
https://doi.org/10.1080/02670844.2018.1564199
https://doi.org/10.1080/02670844.2018.1564199
Publikováno v:
Materials Science-Poland, Vol 34, Iss 2, Pp 315-321 (2016)
Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx) films were grown on multicrystalline silicon (mc-Si) substrate by plasma enhanced chemical vapour deposition (PECVD) in parallel configuration using NH3/SiH4gas mixtures. The mc-Si wafers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c567e815172d284d5db35a80768f0c6
https://doaj.org/article/0fa5c74d54eb465780f4a6f191d52a6e
https://doaj.org/article/0fa5c74d54eb465780f4a6f191d52a6e
Autor:
Samir Meziani, A. Djelloul, Abderrahmane Moussi, S. Chaouchi, L. Benharrat, K. Bendimrad, Kamel Bourai, A. Noukaz
Publikováno v:
Materials Research Express. 7:016426
Laser-assisted diffusion of phosphorus dopants has been investigated to realize selective emitters on mc-Si wafers. In this paper, we studied, in the presence of PSG, the effect of laser speed and power doping parameters on the sheet resistance RSq v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7781a0db5598ef6aea712ea919619de
https://doi.org/10.1088/2053-1591/ab69c6
https://doi.org/10.1088/2053-1591/ab69c6
Autor:
Kamel Bourai, Abderrahmane Moussi, M. Mebarki, Samir Meziani, A. Noukaz, A. Djelloul, Linda Mahiou, Abdelkader Guenda
Publikováno v:
Springer Proceedings in Energy ISBN: 9783319456768
In this paper we present an experimental approach for the realization of selective emitter by laser doping. Multi-crystalline Silicon wafers with thin layer of silicon nitride (SiNx) are treated by laser after phosphorous diffusion and PSG removal. R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f6c3b3241ffcbb4d3326496e5db4018
https://doi.org/10.1007/978-3-319-45677-5_29
https://doi.org/10.1007/978-3-319-45677-5_29
Autor:
Samir Meziani, Abderrahmane Moussi, A. Noukaz, A. Djelloul, Kamel Bourai, Linda Mahiou, M. Mebarki
Publikováno v:
2015 3rd International Renewable and Sustainable Energy Conference (IRSEC).
A simple method for metal deposition on solar cells surface has been developed. Nickel is used as contact barrier to copper and permits low contact resistance on n+ silicon Nickel chloride is used to deposit contacts on front surface. The pattern is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f23c6d477bcb72e31b8f1196fc704348
https://doi.org/10.1109/irsec.2015.7454990
https://doi.org/10.1109/irsec.2015.7454990
Publikováno v:
2015 3rd International Renewable and Sustainable Energy Conference (IRSEC).
This work is a contribution towards the understanding of the optical and structural properties of graded refractive index layers SiN/SiO2 to lead to antireflective coating and efficient passivation of multicristalline silicon wafer. We investigate th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f112865f3e6a9ebb3aca31ae4d981eac
https://doi.org/10.1109/irsec.2015.7454971
https://doi.org/10.1109/irsec.2015.7454971
Autor:
Kamel Bourai, A. Djelloul, M. Mebarki, Linda Mahiou, K. Bendimrad, A. Noukaz, Abderrahmane Moussi, Samir Meziani
Publikováno v:
2014 International Renewable and Sustainable Energy Conference (IRSEC).
In the field of solar energy, in particular for solar cells, the cost and efficiency of the cell is critical. To do this, we will realize a selective emitter on multi-crystalline silicon plates. This work will focus on three parts: The first part wil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b23c2028bc241c90457b1733e0eedf0c
https://doi.org/10.1109/irsec.2014.7059820
https://doi.org/10.1109/irsec.2014.7059820
Publikováno v:
International Journal of Nanoparticles. 6:113
Hydrogenated amorphous silicon nitride (SiNx:H) films were deposited using plasma-enhanced chemical vapour deposition (PECVD) and subsequently, silicon oxide (SiO2) were grown by dry thermal oxidation at 950°C for 60 min or by dip-coating (sol gel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a38e768b41465b7e82c4ba7dc442f5d
https://doi.org/10.1504/ijnp.2013.054986
https://doi.org/10.1504/ijnp.2013.054986