Zobrazeno 1 - 10
of 202
pro vyhledávání: '"Samir M. El-Ghazaly"'
Autor:
Ibrahim N. Alquaydheb, Saleh A. Alfawaz, Amirreza Ghadimi Avval, Sara Ghayouraneh, Samir M. El-Ghazaly
Publikováno v:
IEEE Access, Vol 12, Pp 61697-61707 (2024)
In this work, we present the design and modeling of a new type of choke horn antenna. It incorporates a rectangular waveguide and a rectangular choke acting as a parasitic element. The four-sided geometry of the antenna is applicable to systems that
Externí odkaz:
https://doaj.org/article/f0fc3214955d467a9f172cd72ae5370e
Autor:
Soheil Nouri, Samir M. El-Ghazaly
Publikováno v:
IEEE Access, Vol 11, Pp 100879-100886 (2023)
This work presents a systematic parameter extraction methodology for modeling of millimeter-wave transistors. The physics-based parameter extraction approach in this study is included in the wave-electron-transport model to improve the accuracy of th
Externí odkaz:
https://doaj.org/article/60bb97f690a14c1e893f225c28088b68
Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects
Autor:
Soheil Nouri, Samir M. El-Ghazaly
Publikováno v:
IEEE Access, Vol 10, Pp 92381-92389 (2022)
In this study, the transmission line concept and the electron transport theory are consolidated in a global modeling approach, the wave-electron-transport (WET) model, to account for the physical phenomena in millimeter-wave devices. No equivalent ci
Externí odkaz:
https://doaj.org/article/7e8a5a6888754d7f9e4ab77e124ca1a7
Publikováno v:
IEEE Access, Vol 8, Pp 152333-152341 (2020)
A fully distributed modeling approach is proposed in this paper that incorporates the wave propagation effects in developing the equivalent circuit and works as a simulation tool for analyzing high-frequency transistors such as GaN high electron mobi
Externí odkaz:
https://doaj.org/article/f8dd010154374f6fba5ad71759409f3e
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77797f3c15f2d11f8016a96662a676e9
https://doi.org/10.1109/bcicts53451.2022.10051746
https://doi.org/10.1109/bcicts53451.2022.10051746
Publikováno v:
2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74966f139ae8eb02d6af9f614d2edf67
https://doi.org/10.1109/wmcs55582.2022.9866276
https://doi.org/10.1109/wmcs55582.2022.9866276
Publikováno v:
Journal of Air Transportation. 28:207-210
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::484c76d081df55faaf2be8f5034d6a48
https://doi.org/10.2514/1.d0207
https://doi.org/10.2514/1.d0207
Publikováno v:
IEEE Access, Vol 8, Pp 152333-152341 (2020)
A fully distributed modeling approach is proposed in this paper that incorporates the wave propagation effects in developing the equivalent circuit and works as a simulation tool for analyzing high-frequency transistors such as GaN high electron mobi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::337c1d3e01c886f449cbdbc3e4257d82
https://doi.org/10.1109/access.2020.3017470
https://doi.org/10.1109/access.2020.3017470
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
The effects of wave propagations on gain and cut-off frequency of millimeter-wave transistors are studied based on a new modeling approach. This model is developed based on the electron transport in semiconductor layers and transmission line properti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f9d45b44de8a28b1a99d0d21cfc2c2e
https://doi.org/10.1109/ims19712.2021.9574880
https://doi.org/10.1109/ims19712.2021.9574880
Effects of Electromagnetic Wave Propagations in Large-Signal Analysis of Millimeter-Wave Transistors
Publikováno v:
2021 IEEE 21st Annual Wireless and Microwave Technology Conference (WAMICON).
A distributed-model-based approach is developed for small- and large-signal analyses of millimeter-wave transistors. To obtain the equivalent circuit model parameters, a structure based extraction technique is utilized. The method employs the physica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43f45f10d565d3d637d388100479c3c1
https://doi.org/10.1109/wamicon47156.2021.9443611
https://doi.org/10.1109/wamicon47156.2021.9443611