Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Samir Labiod"'
Autor:
Samir Labiod, Billel Smaani, Shubham Tayal, Shiromani Balmukund Rahi, Hichem Sedrati, Saida Latreche
Publikováno v:
Silicon. 15:1181-1191
Autor:
Yue Ma, Samir Labiod, Latifa Fakri-Bouchet, Jacques Verdier, Francis Calmon, Saïda Latreche, Christian Gontrand
Publikováno v:
International Journal of Mathematics and Statistics. 4
In recent years, NMR/MRI portable devices have drawn attention of numerous researcher teams. They are used for variety of applications, from medical diagnosis to archaeological analysis, nondestructive material testing evaluation of water presence in
Publikováno v:
Silicon. 14:10967-10976
Publikováno v:
International Journal of Circuits, Systems and Signal Processing. 15:1394-1399
In this paper, we propose an analytical drain-current model for long-channel junctionless (JL) cylindrical surrounding-gate MOSFET (SRG MOSFET). It is based on surface-potential solutions obtained from Poisson’s equation using some approximations a
Publikováno v:
2022 19th International Multi-Conference on Systems, Signals & Devices (SSD).
This book provides an overview of emerging semiconductor devices and their applications in electronic circuits, which form the foundation of electronic devices. Device Circuit Co-Design Issues in FETs provides readers with a better understanding of t
Publikováno v:
2017 International Conference on Electrical and Information Technologies (ICEIT).
PIN diode is in fact a device used in a variety of applications for low frequencies up to high radio frequencies, such as photo detector, power rectifier, an RF switch, and applications of high voltage power electronics. Many available models and equ
Publikováno v:
2017 International Conference on Electrical and Information Technologies (ICEIT).
The astonishing evolution in microelectronic systems pushes the conventional 2D technology to its ultimate limits in terms of both performance and functionality while reducing power and cost criteria. To overcome such challenges, using 3D integration
Publikováno v:
Circuits and Systems. :18-26
A Colpitts oscillator, working around a 3 GHz frequency, contains a double gate Metal Oxide Semiconductor transistor (DGMOS). A mixed-mode analysis is involved, applying a quantum model to the device, whereas the rest of the considered circuit is gov
Publikováno v:
Microelectronics Journal. 43:995-1002
A detailed three-dimensional (3-D) full-wave time-domain simulation model is presented for the analysis of an active semiconductor device. Microwave analysis of the nMOS transistor using monolithic microwave integrated circuit (MMIC) is simulated. A