Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Sami Salamin"'
Publikováno v:
IEEE Access, Vol 9, Pp 30687-30697 (2021)
Self-Heating Effects (SHE) is known as one of the key reliability challenges in FinFET and beyond. Large timing guard bands are necessary, which we try to reduce. In this work, we propose operating (biasing) processors at Zero-Temperature Coefficient
Externí odkaz:
https://doaj.org/article/8f0366cefdff49739a159823a5f9461a
Autor:
Georgios Zervakis, Iraklis Anagnostopoulos, Sami Salamin, Yogesh S. Chauhan, Jorg Henkel, Hussam Amrouch
Publikováno v:
IEEE Access, Vol 9, Pp 43748-43758 (2021)
This is the first work to investigate the impact that Negative Capacitance Field-Effect Transistor (NCFET) brings on the efficiency and accuracy of future Neural Networks (NN). NCFET is at the forefront of emerging technologies, especially after it h
Externí odkaz:
https://doaj.org/article/97a52dd281c64e0687d7170ef04f4b5d
Autor:
Georgios Zervakis, Iraklis Anagnostopoulos, Sami Salamin, Ourania Spantidi, Isai Roman-Ballesteros, Jorg Henkel, Hussam Amrouch
Publikováno v:
IEEE Transactions on Computers. 71:2687-2697
Impact of NCFET Technology on Eliminating the Cooling Cost and Boosting the Efficiency of Google TPU
Autor:
Sami Salamin, Florian Klemme, Jorg Henkel, Hussam Amrouch, Yogesh Singh Chauhan, Hammam Kattan, Georgios Zervakis
Publikováno v:
IEEE Transactions on Computers. 71:906-918
Recent breakthroughs in Neural Networks (NNs) led to significant accuracy improvements. This accuracy improvement comes at the cost of immense increase in computation demands. NNs became one of the most common and computationally intensive workloads
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 68:4299-4309
For the first time, we demonstrate an optimization technique to synthesize circuits in the Negative Capacitance FET (NCFET) technology. NCFET is a rapidly emerging technology to replace the currently employed CMOS technology due to its profound abili
Autor:
Anuj Pathania, Jorg Henkel, Sami Salamin, Hussam Amrouch, Arka Maity, Martin Rapp, Tulika Mitra
Publikováno v:
IEEE Transactions on Computers. 70:1484-1497
Multi-/many-core, homogeneous or heterogeneous architectures, using the existing CMOS technology are inevitably approaching the limit of attainable power efficiency due to the fundamental limits in scaling. Negative Capacitance Field-Effect Transisto
Autor:
Sami Salamin, Yogesh Singh Chauhan, Jorg Henkel, Georgios Zervakis, Iraklis Anagnostopoulos, Hussam Amrouch
Publikováno v:
IEEE Access, Vol 9, Pp 43748-43758 (2021)
IEEE Access, 9, 43748-43758
IEEE Access, 9, 43748-43758
This is the first work to investigate the impact that Negative Capacitance Field-Effect Transistor (NCFET) brings on the efficiency and accuracy of future Neural Networks (NN). NCFET is at the forefront of emerging technologies, especially after it h
Autor:
Georgios Zervakis, Sami Salamin, Jorg Henkel, Hammam Kattan, Hussam Amrouch, Iraklis Anagnostopoulos
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 39:3842-3855
Neural processing units (NPUs) are becoming an integral part in all modern computing systems due to their substantial role in accelerating neural networks (NNs). The significant improvements in cost-energy-performance stem from the massive array of m
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 39:3361-3372
Power and energy consumption are the key optimization goals in all modern processors. Negative capacitance field-effect transistors (NCFETs) are a leading emerging technology that promises outstanding performance in addition to better energy efficien
Autor:
Jorg Henkel, Iraklis Anagnostopoulos, Sami Salamin, Ourania Spantidi, Georgios Zervakis, Hussam Amrouch
Publikováno v:
DATE
Transistor aging is one of the major concerns that challenges designers in advanced technologies. It profoundly degrades the reliability of circuits during its lifetime as it slows down transistors resulting in errors due to timing violations unless
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7479ba6a2a11d6bef87c8c3c20cd2abf
http://arxiv.org/abs/2103.04812
http://arxiv.org/abs/2103.04812