Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Sami Ortoleva"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 272:210-213
This work presents in-situ near and below sputter-threshold studies for GaSb(1 0 0) at energies 50, 100 and 200 eV and current densities near 50 μAcm−2. Variation of incident particle energy probes the energy deposition distribution and its relati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02c6187d3641ce2a43f4042df7ff5c81
https://doi.org/10.1016/j.nimb.2011.01.067
https://doi.org/10.1016/j.nimb.2011.01.067
Publikováno v:
Birck and NCN Publications
A systematic study is conducted in order to elucidate the underlying mechanism(s) for nanopatterning with low-energy irradiation of GaSb (100) under normal incidence. Ion energies between 50 and 1000 eV of Ar+ and ion fluences of up to 10(18) cm(-2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e51a12f0368c2e115989efec591ae718
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1940&context=nanopub
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1940&context=nanopub
Autor:
Osman El-Atwani, Jean Paul Allain, Alex Cimaroli, Daniel Rokusek, Anastassiya Suslova, Sami Ortoleva
Publikováno v:
MRS Proceedings. 1354
Ion-beam sputtering (IBS) has been studied as a means for scalable, mask-less nanopatterning of surfaces. Patterning at the nanoscale has been achieved for numerous types of materials including: semiconductors, metals and insulators. Although much wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e121c637e9157dff60923e757b988b5
https://doi.org/10.1557/opl.2011.1458
https://doi.org/10.1557/opl.2011.1458
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 6, Iss 1, p 403 (2011)
Birck and NCN Publications
Nanoscale Research Letters, Vol 6, Iss 1, p 403 (2011)
Birck and NCN Publications
Ion beam sputtering of ultrathin film Au coatings used as a physical catalyst for self-organization of Si nanostructures has been achieved by tuning the incident particle energy. This approach holds promise as a scalable nanomanufacturing parallel pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8551e6da4097a7bea2576eefc9409f03
http://europepmc.org/articles/PMC3211498
http://europepmc.org/articles/PMC3211498
Autor:
J P Allain, A Shetty
Publikováno v:
Journal of Physics D: Applied Physics; 7/19/2017, Vol. 50 Issue 28, p1-1, 1p