Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Sami Hached"'
Autor:
Mohamed Ali, Mohamad Sawan, Ahmed Chiheb Ammari, Sami Hached, Yvon Savaria, Jean-Pierre David, Aref Trigui
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 67:3978-3990
This paper presents a wireless power and downlink data transfer system for medical implants operating over a single $10~MHz$ inductive link. The system is based on a Carrier Width Modulation (CWM) scheme for high-speed communication and efficient pow
Publikováno v:
IEEE Reviews in Biomedical Engineering. 12:72-87
Due to the constantly growing geriatric population and the projected increase of the prevalence of chronic diseases that are refractory to drugs, implantable medical devices (IMDs) such as neurostimulators, endoscopic capsules, artificial retinal pro
Publikováno v:
IEEE/ASME Transactions on Mechatronics. 21:945-955
Implantation of an artificial urinary sphincter (AUS) is the treatment of choice for managing severe stress urinary incontinence. This hydromechanical implant mimics a healthy sphincter by exerting a constant circumferential pressure around the ureth
Publikováno v:
IEEE/ASME Transactions on Mechatronics. 20:3040-3052
Severe stress urinary incontinence is a nonnegligible complication that affects men as well as women. When initial therapies are not sufficient, implantation of artificial urinary sphincters (AUS) is considered the gold standard treatment. This hydro
Publikováno v:
IEEE Transactions on Power Electronics. 30:6078-6087
Inductive power transfer (IPT) is a commonly employed technique for wirelessly supplying power to implantable medical devices. A major limit of this approach is the sensitivity of the inductive link to coupling factor variations between transmitting
Publikováno v:
BioCAS
This paper covers the design, development and prototyping of an implantable wireless bladder pressure monitoring system. The proposed device is an essential part of a novel health solution intended for patients with bladder dysfunctions. It allows th
Publikováno v:
NEWCAS
The first high-temperature characterization of GaN150 HEMT devices is presented from ambient temperature to 400°C. With a 2-gate length of 150nm, three configurations of GaN150 are investigated. They have gate widths of 40µm (T 1 ), 100µm (T 2 ) a
Publikováno v:
Biomedical Signal Processing and Control, 55:101667. Elsevier
Aims The objective of this work is to investigate whether changes in bladder pressure’s patterns can be used to forecast voiding events in rats with both normal and overactive detrusor. Methods A voiding forecasting algorithm based on machine learn
Publikováno v:
IEEE/ASME Transactions on Mechatronics. 19:1352-1362
Implantation of artificial urinary sphincters (AUSs) is considered to be the gold standard treatment in severe cases of stress urinary incontinence. The functioning of these implants is purely hydromechanical, as they apply constant pressure around t
Publikováno v:
MWSCAS
Stress urinary incontinence is a complication that considerably affects patient quality of life. When conservative measures are not sufficient for recovering patient's continence, urologists suggest the implantation of an artificial urinary sphincter