Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Sameer Pendharkar"'
Autor:
Steven A. Ringel, Christine Jackson, Wenyuan Sun, Aaron R. Arehart, Sameer Pendharkar, Srikanth Krishnan, Jungwoo Joh
Publikováno v:
IEEE Transactions on Electron Devices. 66:890-895
It is shown that an $E_{\rm C}$ –0.90 eV trap in commercial AlGaN/GaN MISHEMTs grown on a Si (111) substrate is responsible for a −1.8-V threshold voltage ( $V_{\rm T}$ ) instability using a combination of defect spectroscopy and double-pulsed cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b6f428a57d4d842d6b72c9ff3243d59
https://doi.org/10.1109/ted.2018.2888840
https://doi.org/10.1109/ted.2018.2888840
Autor:
Sameer Pendharkar
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Innovations in multi-domain mixed signal integration are driving Industry 4.0 whereas significant improvements in power density and high voltage technology is enabling automotive systems like the 48V battery as well as EV/HEV. Though silicon is still
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e031e2fa6f6f3ade7a30f74643e698d
https://doi.org/10.1109/ispsd46842.2020.9170153
https://doi.org/10.1109/ispsd46842.2020.9170153
Publikováno v:
Solid-State Electronics. 111:141-146
The physical origin of majority charge carrier fluctuations in the SiO2 interface of Si at accumulation has been investigated and analyzed for differently processed and voltage-rated reduced surface field (RESURF), lateral-double-diffused MOS (LDMOS)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f2ad0bb039c5b64a80f49a5f42586b4
https://doi.org/10.1016/j.sse.2015.05.043
https://doi.org/10.1016/j.sse.2015.05.043
Autor:
Allison Lemus, Sameer Pendharkar, Jesus A. del Alamo, Srikanth Krishnan, Jungwoo Joh, Shireen Warnock
Publikováno v:
Prof. del Alamo via Phoebe Ayers
We have investigated time-dependent dielectric breakdown in high-voltage AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors, with a focus specifically on the role of temperature under positive gate stress conditions. We ai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::337e024ff083542426db357055839ccc
https://hdl.handle.net/1721.1/126183
https://hdl.handle.net/1721.1/126183
Autor:
David LaFonteese, Hiromi Endoh, Danyang Zhu, Kim Sunglyong, Katsushi Boku, Sameer Pendharkar, Danyang Seetharaman Sridhar
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
A new concept to realize self-protected ESD structure for 700V high side gate drive IC without additional process steps and area penalty is presented. The device was verified by simulation and confirmed by experimental results. A parasitic NPN struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::552b3d192be9cb520d42e3c09946023d
https://doi.org/10.23919/ispsd.2017.7988880
https://doi.org/10.23919/ispsd.2017.7988880
Autor:
Lixing Fu, Jungwoo Joh, Tathagata Chatterjee, A. Sasikumar, Sameer Pendharkar, Sandeep R. Bahl
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
Standard qualification methodology or “qual” does not specify product-level testing due to the diverse range of products and use conditions, a limited ability for system-level acceleration, and complication from system-level failures. This is a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58beca3dff0529cd7eb5cd276a06967b
https://doi.org/10.1109/iedm.2016.7838461
https://doi.org/10.1109/iedm.2016.7838461
Autor:
Fan-Chi Hou, Pinghai Hao, Benjamin L. Amey, Zeynep Celik-Butler, Xu Cheng, Sameer Pendharkar, M. I. Mahmud, Purushothaman Srinivasan
Publikováno v:
IEEE Transactions on Electron Devices. 60:677-683
A physics-based model has been implemented to describe the low-frequency noise behavior in differently processed reduced-surface-field lateral double-diffused MOS devices. The developed model is based upon the correlated carrier number and the mobili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d252c26d95045c7716ba7ceb83b7ec7b
https://doi.org/10.1109/ted.2012.2226178
https://doi.org/10.1109/ted.2012.2226178
Autor:
Sameer Pendharkar
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
Today's smart power technologies and advanced packaging techniques have helped enable complex power systems on chip (SOCs) as well as multi-chip power modules and systems in package (SIPs). Innovations in power management SOCs and SIPs have been key
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::900499599ce50c4326580ad3e347383f
https://doi.org/10.1109/vlsit.2016.7573394
https://doi.org/10.1109/vlsit.2016.7573394
Characterization and modeling of electrical stress degradation in STI-based integrated power devices
Autor:
G. Barone, Susanna Reggiani, Giorgio Baccarani, Sameer Pendharkar, S. Poli, Elena Gnani, Marie Denison, Rick L. Wise, Weidong Tian, Ming-Yeh Chuang, Antonio Gnudi
Lateral DMOS transistors are widely used in mixed-signal integrated-circuit design as integrated high-voltage switches and drivers. The LDMOS with shallow-trench isolation (STI) is the device of choice to achieve voltage and current capability integr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a15c9eb0f1d08a8d4d837c9db3906ad
http://hdl.handle.net/11585/463575
http://hdl.handle.net/11585/463575
Autor:
S. Poli, Susanna Reggiani, R. Wise, Giorgio Baccarani, Marie Denison, Elena Gnani, Sameer Pendharkar, Antonio Gnudi
Publikováno v:
Solid-State Electronics. :57-63
Degradation induced by hot-carrier stress (HCS) in a Multi-STI-Finger (MF) LDMOS is analyzed through both electrical measurements and TCAD simulations. The critical HCS issues have been first addressed on a conventional STI-based LDMOS. Then, the de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d513b42b1ec9a52de5f918a339bfd769
https://doi.org/10.1016/j.sse.2011.06.007
https://doi.org/10.1016/j.sse.2011.06.007