Zobrazeno 1 - 10
of 906
pro vyhledávání: '"Samarth N"'
Autor:
Stanley, M., Li, Y., Palmstrom, J. C., Thompson, J. L., Halanayake, K. D., Reifsnyder-Hickey, D., McDonald, R. D., Crooker, S. A., Trivedi, N., Samarth, N.
Publikováno v:
Phys. Rev. B 109, 094514 (2024)
We use magnetoresistance measurements at high magnetic field (B \leq 65 T) and low temperature (T \geq 500 mK) to gain fresh insights into the behavior of the upper critical field, Hc2, in superconducting ultrathin FeSe films of varying degrees of di
Externí odkaz:
http://arxiv.org/abs/2310.19241
Autor:
Golias, E., Weschke, E., Flanagan, T., Schierle, E., Richardella, A., Rienks, E. D. L., Mandal, P. S., Varykhalov, A., Sánchez-Barriga, J., Radu, F., Samarth, N., Rader, O.
V-doped (Bi,Sb)$_2$Te$_3$ has a ten times higher magnetic coercivity than its Cr-doped counterpart and therefore is believed to be a superior system for the quantum anomalous Hall effect (QAHE). The QAHE requires the opening of a magnetic band gap at
Externí odkaz:
http://arxiv.org/abs/2010.07083
Autor:
Liu, J. Y., Yu, J., Ning, J. L., Yi, H. M., Miao, L., Min, L. J., Zhao, Y. F., Ning, W., Lopez, K. A., Zhu, Y. L., Pillsbury, T., Zhang, Y. B., Wang, Y., Hu, J., Cao, H. B., Balakirev, F., Weickert, F., Jaime, M., Lai, Y., Yang, Kun, Sun, J. W., Alem, N., Gopalan, V., Chang, C. Z., Samarth, N., Liu, C. X., Mcdonald, R. D., Mao, Z. Q.
Publikováno v:
NATURE COMMUNICATIONS 12:4062 (2021)
Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has spa
Externí odkaz:
http://arxiv.org/abs/1907.06318
Publikováno v:
Phys. Rev. Lett. 119, 077702 (2017)
Recent studies on the magneto-transport properties of topological insulators (TI) have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly the strongly spin-moment coupled electr
Externí odkaz:
http://arxiv.org/abs/1703.07470
Akademický článek
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Autor:
Lachman, E., Young, A. F., Richardella, A., Cuppens, J., HR, Naren, Anahory, Y., Meltzer, A. Y., Kandala, A., Kempinger, S., Myasoedov, Y., Huber, M. E., Samarth, N., Zeldov, E.
Publikováno v:
Science Advances 06 Nov 2015: Vol. 1, no. 10, e1500740
Quantized Hall conductance is a generic feature of two dimensional electronic systems with broken time reversal symmetry. In the quantum anomalous Hall state recently discovered in magnetic topological insulators, time reversal symmetry is believed t
Externí odkaz:
http://arxiv.org/abs/1506.05114
Publikováno v:
Nature Communications 6, 7434 (2015)
When a three-dimensional (3D) ferromagnetic topological insulator thin film is magnetized out-of-plane, conduction ideally occurs through dissipationless, one-dimensional (1D) chiral states that are characterized by a quantized, zero-field Hall condu
Externí odkaz:
http://arxiv.org/abs/1503.03556
Publikováno v:
Phys. Rev. B 91, 235437 (2015)
We demonstrate that the charge-spin conversion efficiency of topological insulators (TI) can be experimentally determined by injecting spin-polarized tunneling electrons into a TI. Through a comparative study between bismuth selenide and bismuth anti
Externí odkaz:
http://arxiv.org/abs/1410.7494
Autor:
Chapler, B. C., Post, K. W., Richardella, A. R., Lee, J. S., Tao, J., Samarth, N., Basov, D. N.
We report on infrared (IR) optical experiments on Bi$_2$Te$_3$ and Mn-doped Bi$_2$Te$_3$ epitaxial thin films. In the latter film, dilute Mn doping (4.5\%) of the topologically nontrivial semiconductor host results in time-reversal-symmetry-breaking
Externí odkaz:
http://arxiv.org/abs/1405.4916
Autor:
Mellnik, A. R., Lee, J. S., Richardella, A., Grab, J. L., Mintun, P. J., Fischer, M. H., Vaezi, A., Manchon, A., Kim, E. -A., Samarth, N., Ralph, D. C.
Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic memory and logi
Externí odkaz:
http://arxiv.org/abs/1402.1124