Zobrazeno 1 - 10
of 125
pro vyhledávání: '"Samar K. Saha"'
Autor:
Samar K. Saha
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 985-994 (2021)
This paper presents a comparative study on the effect of statistical dopant fluctuations on threshold voltage ( $V_{th}$ ) of emerging and conventional metal-oxide-semiconductor (MOS) field-effect (FET) transistors (MOSFETs). In this context, three $
Externí odkaz:
https://doaj.org/article/b7d733ee27cd4a4eb7ba23fdee14c076
Autor:
Samar K. Saha, Arokia Nathan, P. Susthitha Menon, Jagadheswaran Rajendran, Asrulnizam Bin Abd Manaf, Leong Wai Yie
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1105-1110 (2020)
This Special Issue is assembled from a selection of highly-rated technical papers presented at the 2020 IEEE Electron Devices Technology and Manufacturing Conference that took place April 6-21, 2020.
Externí odkaz:
https://doaj.org/article/e4447ddfb6c4485a9e44c7e818c7c8bd
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1202-1209 (2020)
This article presents a systematic study on the analog and radio-frequency (RF) performance of type-II staggered heterostructure p-channel tunnel field-effect transistors (pTFETs) with Ge (Germanium) channel and different compound semiconductor sourc
Externí odkaz:
https://doaj.org/article/9e7a1035165f448eb1d0249dabba4655
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 753-755 (2019)
This Special Section is devoted to the research and development activities of all areas of flexible electronics science and technology. We have a selected number of high impact technical papers presented at the first IEEE International Flexible Elect
Externí odkaz:
https://doaj.org/article/eb3081f4244d4ba3b22634cca175a177
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 909-910 (2021)
This Special Section follows from a selection of highly-rated, high impact technical papers presented at the 11th International Conference on Computer-Aided Design for Thin Film Transistor Technologies (CAD-TFT) 2020. The CAD-TFT 2020 was held as a v
Externí odkaz:
https://doaj.org/article/cddbfffe68da4bb9b68de970545982d3
Autor:
Samar K. Saha
Publikováno v:
IEEE Access, Vol 4, Pp 507-513 (2016)
This paper presents a simple mathematical expression to model the effect of statistical dopant fluctuations on threshold voltage (Vth) of junction field-effect transistors (JFETs). The random discrete doping (RDD) in the active device area is used to
Externí odkaz:
https://doaj.org/article/95e7d6348cc44d1fbe2c088d28f0877d
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 5, Pp 410-417 (2015)
This paper presents the results of a systematic theoretical investigation on the impact of gate height on the analog and radio-frequency (RF) performances of underlap-FinFET devices. The conventional underlap-FinFETs offer lower on current (Ion) and
Externí odkaz:
https://doaj.org/article/b73dbd2532fa4146872b5b6e95c4a476
Autor:
Anirban Banerjee, Samar K. Saha
Publikováno v:
Journal of Advanced Research, Vol 5, Iss 3, Pp 319-328 (2014)
We studied the fine structure of some classical and six variant mitochondria from different tissues viz. proboscis gland, spinal gland, ovary, testis, and muscle of a fish ectoparasite, Argulus bengalensis. In the proboscis gland and spinal gland, mi
Externí odkaz:
https://doaj.org/article/1d991b2a0ee94f7fa4560718cee4caac
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 2, Iss 6, Pp 135-144 (2014)
This paper presents a systematic study of the effect of source/drain (S/D) implant lateral straggle on the RF performance of the symmetric and asymmetric underlap double gate (UDG) MOSFET devices. The length of the underlap regions (Lun) on each side
Externí odkaz:
https://doaj.org/article/44aa9ceac705425e8f68bdcea6588498
Autor:
Samar K. Saha
Publikováno v:
IEEE Access, Vol 2, Pp 104-115 (2014)
This paper presents a systematic methodology to develop compact MOSFET models for process variability-aware VLSI circuit design. Process variability in scaled CMOS technologies severely impacts the functionality, yield, and reliability of advanced in
Externí odkaz:
https://doaj.org/article/55d2d14126bb4bca94ab0b1f6f56c636