Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Samantha T. Jaszewski"'
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 8, Pp n/a-n/a (2023)
Abstract Non‐volatile memory device structures such as ferroelectric random‐access memory and ferroelectric tunnel junctions employ switchable spontaneous polarization to hold binary states. These devices can potentially benefit from the impositi
Externí odkaz:
https://doaj.org/article/d76d51da89ed41579861b8ecfab648ef
Autor:
Samantha T. Jaszewski, Philip Ryan, Michael David Henry, Jon F. Ihlefeld, Alejandro Salanova, Paul Davids, Ian A. Brummel, Giovanni Esteves, Sean W. Smith, Steve Wolfley, Shelby S. Fields
Publikováno v:
ACS Applied Materials & Interfaces. 12:26577-26585
Ferroelectric hafnium zirconium oxide holds great promise for a broad spectrum of complementary metal-oxide-semiconductor (CMOS) compatible and scaled microelectronic applications, including memory, low-voltage transistors, and infrared sensors, amon
Autor:
Samantha T. Jaszewski, Eric R. Hoglund, Anna Costine, Marc H. Weber, Shelby S. Fields, Maria Gabriela Sales, Jaykumar Vaidya, Leah Bellcase, Katie Loughlin, Alejandro Salanova, Diane A. Dickie, Steven L. Wolfley, M. David Henry, Jon-Paul Maria, Jacob L. Jones, Nikhil Shukla, Stephen J. McDonnell, Petra Reinke, Patrick E. Hopkins, James M. Howe, Jon F. Ihlefeld
Publikováno v:
Acta Materialia. 244:118567
Autor:
Samantha T. Jaszewski, Eric R. Hoglund, Anna Costine, Marc H. Weber, Shelby S. Fields, Maria Gabriela Sales, Jaykumar Vaidya, Leah Bellcase, Katie Loughlin, Alejandro Salanova, Diane A. Dickie, Steven L. Wolfley, M. David Henry, Jon-Paul Maria, Jacob L. Jones, Nikhil Shukla, Stephen J. McDonnell, Petra Reinke, Patrick E. Hopkins, James M. Howe, Jon F. Ihlefeld
Publikováno v:
Acta Materialia. 239:118220
Autor:
Shelby S. Fields, Truong Cai, Samantha T. Jaszewski, Alejandro Salanova, Takanori Mimura, Helge H. Heinrich, Michael David Henry, Kyle P. Kelley, Brian W. Sheldon, Jon F. Ihlefeld
Publikováno v:
Advanced Electronic Materials. 8:2200601
Autor:
Michael T. Brumbach, John F. Conley, Melanie A. Jenkins, M. David Henry, Konner E. K. Holden, Joseph C. Woicik, Samantha T. Jaszewski, Jon F. Ihlefeld, Sean W. Smith, Conan Weiland
Publikováno v:
ACS applied materialsinterfaces. 13(12)
Doped ferroelectric HfO2 is highly promising for integration into complementary metal-oxide semiconductor (CMOS) technology for devices such as ferroelectric nonvolatile memory and low-power field-effect transistors (FETs). We report the direct measu
Autor:
Jon F. Ihlefeld, Maria Gabriela Sales, Stephen McDonnell, Peter M. Litwin, Shelby S. Fields, Samantha T. Jaszewski
Ferroelectric oxides interfaced with transition metal dichalcogenides (TMDCs) offer a promising route toward ferroelectric-based devices due to lack of dangling bonds on the TMDC surface leading to a high-quality and abrupt ferroelectric/TMDC interfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5fef289b6f33064482b881b98a835500
Publikováno v:
Materials Chemistry and Physics. 217:451-456
Recent reports of superconductivity and magnetism in single crystals of [Li1−xFexOH]FeS show unexplained variations in both superconducting and magnetic properties. We investigate the effect of hydrothermal growth conditions on these properties and
Autor:
Samantha T. Jaszewski, Nathan T. Nesbitt, Michael J. Naughton, Ming Ma, Wilson A. Smith, Fazel Tafti, Michael J. Burns, Bartek J. Trześniewski
Publikováno v:
The Journal of Physical Chemistry C. 122:10006-10016
Electrochemical CO2 reduction can convert CO2 into fuels and valuable chemicals using renewable electricity, which provides a prospective path toward large-scale energy storage. Au nanostructured e...
Autor:
Stephen McDonnell, Wendy L. Sarney, Jon F. Ihlefeld, Sean W. Smith, Samantha T. Jaszewski, Takanori Mimura, Sina Najmaei, Maria Gabriela Sales, Shelby S. Fields
Publikováno v:
2D Materials. 9:015001