Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Samantha N. Hood"'
Autor:
Jarvist M. Frost, Lucy D. Whalley, Samantha N. Hood, Aron Walsh, Puck van Gerwen, Sung-Hyun Kim
Publikováno v:
Journal of the American Chemical Society
Improvement in the optoelectronic performance of halide perovskite semiconductors requires the identification and suppression of nonradiative carrier trapping processes. The iodine interstitial has been established as a deep level defect and implicat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17890e8278e1871c4e45cb98a6055b4d
https://pubmed.ncbi.nlm.nih.gov/34102845
https://pubmed.ncbi.nlm.nih.gov/34102845
Publikováno v:
The Journal of Physical Chemistry Letters. 10:3863-3870
Quantifying energetic disorder in organic semiconductors continues to attract attention because of its significant impact on the transport physics of these technologically important materials. Here, we show that the energetic disorder of organic semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e8698279f1109ad163294b579a3c284
https://doi.org/10.1021/acs.jpclett.9b01304
https://doi.org/10.1021/acs.jpclett.9b01304
Autor:
Kunie Ishioka, Samantha N. Hood, Yoshitaka Matsushita, Kazuto Hirata, Hui Yang, Yuka Kobayashi, Aron Walsh
Publikováno v:
Chemical Science
Radical electrons tend to localize on individual molecules, resulting in an insulating (Mott–Hubbard) bandgap in the solid state. Herein, we report the crystal structure and intrinsic electronic properties of the first single crystal of a π-radica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdcfb4e29ae0930032660d69294b4183
http://hdl.handle.net/10044/1/84276
http://hdl.handle.net/10044/1/84276
Publikováno v:
Chemical Science
Charge transport is well understood in both highly ordered materials (band conduction) or highly disordered ones (hopping conduction). In moderately disordered materials—including many organic semiconductors—the approximations valid in either ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a35464140d8ce0e6251d93425e881cca
Defects influence the properties and functionality of all crystalline materials. For instance, point defects participate in electronic (e.g. carrier generation and recombination) and optical (e.g. absorption and emission) processes critical to solar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::374d129048ff88631a25411c7fe3601a
Autor:
Samantha N. Hood, Yuka Kobayashi, Hui Yang, Kazuto Hirata, Aron Walsh, Yoshitaka Matsushita, Kunie Ishioka
Publikováno v:
Chemical Science
Radical electrons tend to localize on individual molecules, resulting in an insulating (Mott-Hubbard) bandgap in the solid state. Herein, we report the crystal structure and intrinsic electronic properties of the first single crystal of a π-radical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92756087c6a324963c87d6111a277f81
http://europepmc.org/articles/PMC8162466
http://europepmc.org/articles/PMC8162466
Publikováno v:
Journal of Materials Chemistry A
The performance of kesterite thin-film solar cells is limited by a low open-circuit voltage due to defect-mediated electron-hole recombination. We calculate the non-radiative carrier-capture cross sections and Shockley-Read-Hall recombination coeffic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe1561f52917866aae55e9166b93347f
http://hdl.handle.net/10044/1/68758
http://hdl.handle.net/10044/1/68758
Autor:
Maykel Courel, Clas Persson, Zacharie Jehl, Aron Walsh, Konstantina Iordanidou, Mukesh Kumar, Sanghyun Lee, Dan Huang, Johan Lauwaert, Samantha N. Hood
Publikováno v:
Journal of Physics: Energy
JOURNAL OF PHYSICS-ENERGY
JOURNAL OF PHYSICS-ENERGY
Kesterite semiconductors, derived from the mineral Cu2(Zn,Fe)SnS4, adopt superstructures of the zincblende archetype. This family of semiconductors is chemically flexible with the possibility to tune the physical properties over a large range by modi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e728ece10fb538e7adc22ce62a01dec4
http://hdl.handle.net/10852/75425
http://hdl.handle.net/10852/75425
Publikováno v:
Physical Review B
Lattice vibrations of point defects are essential for understanding non-radiative electron and hole capture in semiconductors as they govern properties including persistent photoconductivity and Shockley-Read-Hall recombination rate. Although the har
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa322fe9f9bf618eb20867080f64fd03