Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Samaneh Ranjbar"'
Publikováno v:
New Approaches in Sport Sciences, Vol 1, Iss 1, Pp 117-138 (2019)
The purpose of this study is to investigate the effect of brand, design and price on the perceived quality and re-intention of consumers to buy sport brand shoes. This is an applied research conducted as a descriptive correlational study in field for
Externí odkaz:
https://doaj.org/article/4362ec6bcf3142db8e08f7c9153dfe75
Autor:
Laleh Vahedi, Maryam Ghasemi, Jamshid Yazdani, Samaneh Ranjbar, Banafshe Nouri, Ahad Alizadeh, Parvaneh Afshar
Publikováno v:
International Journal of Hematology-Oncology and Stem Cell Research, Vol 12, Iss 2 (2018)
Background: Breast cancer is one of the most common cancers among women in the world, especially in Iran. There are large numbers of molecular and genomic factors causing breast cancer as well as many markers associated with tumor invasion. Chemokine
Externí odkaz:
https://doaj.org/article/4640a74790a5413c8742c6fc25e3674c
Autor:
Jennifer P. Teixeira, A. Shongalova, J. C. González, Maria R. Correia, Siddhartha Garud, José M. V. Cunha, Joaquim P. Leitão, Pedro M. P. Salomé, Paulo Fernandes, Bart Vermang, Samaneh Ranjbar
Publikováno v:
Solar Energy Materials and Solar Cells. 187:219-226
In this work we present a method to grow Sb 2 Se 3 thin films with a potential use as absorber layers in solar cell structures. The films were grown on several substrates: soda-lime glass, Mo coated soda-lime glass and Si. The Sb-Se precursor's films
Autor:
J. C. González, Samaneh Ranjbar, Santunu Ghosh, Maria R. Correia, Aigul Shongolova, Paulo Fernandes, Bart Vermang, Pedro M. P. Salomé, N. Cifuentes, Siddhartha Garud, G. M. Ribeiro
Publikováno v:
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
A study of the electronic conduction mechanisms and electrically active defects in polycrystalline Sb2Se3 is presented. It is shown that for temperatures above 200 K, the electrical transport is dominated by thermal emission of free holes, ionized fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8d515384e94954d6af4eef48b4d9a2b
Autor:
Bart Vermang, Jef Poortmans, Thomas Schnabel, Z. Huang, Sylvester Sahayaraj, Samaneh Ranjbar, Guy Brammertz, Erik Ahlswede, Jef Vleugels, Marc Meuris
Publikováno v:
Solar Energy Materials and Solar Cells. 171:136-141
The fabrication and properties of a Ge-based Kesterite Cu 2 ZnGeSe 4 (CZGSe) solar cell are discussed. The existence of the quaternary compound has been verified by physical methods such as X Ray Diffraction (XRD) and Energy Dispersive Spectroscopy (
Autor:
Samaneh Ranjbar, Shuren Cong, Makoto Karakawa, Tohru Sugahara, Shijo Nagao, Jinting Jiu, Tingting Wei, Afshin Hadipour, Tom Aernouts, Yukiko Hirose, Katsuaki Suganuma
Publikováno v:
Journal of Materials Chemistry C. 5:889-895
Molybdenum oxide (MoOx) films show great potential for use in electrical devices because they display a diversity of valence states of the Mo cation. A simple and mild sol–gel route was developed to synthesize MoOx hole transport layers (HTLs) for
Publikováno v:
physica status solidi (c)
Pure selenide Cu2ZnSnSe4solar cells were fabricated with a maximum achieved open-circuit voltage (VOC) of 454 mV, which is on par with the highest knownVOCfor this technology (Bourdais et al.,Adv. Energ. Mater.2016,6). A simple, non-vacuum, spin co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48ed1e038acf100b11f767f1e1d0ef53
Autor:
E. Ahlswede, M. Meuris, T. Schnabel, Sylvester Sahayaraj, Samaneh Ranjbar, Z. Huang, Jef Vleugels, Guy Brammertz, Bart Vermang, J. Poortmans
Publikováno v:
Publons
In this work, the fabrication and properties of a Ge-based Kesterite Cu2ZnGeSe4 solar cell have been discussed. The substitution and the existence of the quaternary compound has been verified by physical methods. The device has a power conversion eff
In this work, we used a solution processed TiO2 layer between Cu2ZnSnSe4 and CdS buffer layer to reduce the recombination at the p-n junction. Introducing the TiO2 layer showed a positive impact on VOC but fill factor and efficiency decreased. Using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::91c296f5b1cf4328fa4164ac53605368
https://zenodo.org/record/578409
https://zenodo.org/record/578409
We investigated the use of ternary and quaternary chalcogenide compounds based on Cu, Zn, Sn and Si for use as high band gap absorber layers in thin film photovoltaics. We have investigated the fabrication of Cu2Zn(Sn,Si)Se4, Cu2Si(S,Se)3and Cu8Si(S,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::ece498ecebfc94c65de3f8ce510f2f98
https://zenodo.org/record/578489
https://zenodo.org/record/578489