Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Saman Majdi"'
Autor:
Kiran Kumar Kovi, Ian Friel, Saman Majdi, Daniel J. Twitchen, Jan Isberg, Viktor Djurberg, Markus Gabrysch, Nattakarn Suntornwipat
Publikováno v:
Nano Letters
The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices require all-electric control of long-lived valle
Autor:
Saman Majdi, Viktor Djurberg, Mohammad Asad, Aisuluu Aitkulova, Nattakarn Suntornwipat, Jan Stake, Jan Isberg
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
Materials; Volume 14; Issue 15; Pages: 4202
The exceptional electronic properties of cadmium telluride (CdTe) allow the material to be used in a wide range of high energy radiation detection applications. Understanding the mechanisms of local carrier scattering is of fundamental importance to
Publikováno v:
Materials
Materials, Vol 14, Iss 4202, p 4202 (2021)
Materials, Vol 14, Iss 4202, p 4202 (2021)
The exceptional electronic properties of cadmium telluride (CdTe) allow the material to be used in a wide range of high energy radiation detection applications. Understanding the mechanisms of local carrier scattering is of fundamental importance to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid_dedup__::67bde7fb1fbc108223a4c0ed02edb02d
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-451182
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-451182
Autor:
Viktor Djurberg, Ikuko Akimoto, Nobuko Naka, Hideto Matsuoka, Saman Majdi, Kazuki Konishi, Jan Isberg
The mobility-lifetime ( μ τ) product is an important parameter that determines the performance of electronic and photonic devices. To overcome the previously reported difficulties in measuring the μ τ product at cryogenic temperatures, we impleme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d9b518a902ecc342b162498b66115d6
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-426144
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-426144
The transferred-electron oscillator (TEO) is a device used in microwave applications that utilizes the negative differential mobility (NDM) effect to generate continuous oscillations. Recently, NDM was observed in intrinsic single-crystalline chemica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d54df8b75421a5188a9ed4c4c83daab4
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-397407
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-397407
Publikováno v:
Advanced Theory and Simulations. 4:2000103
A method based on the scaling properties of the Boltzmann transport equation is proposed to identify the dominant scattering mechanisms that affect charge transport in a semiconductor. This method uses drift velocity data of mobile charges at differe
Publikováno v:
ECS Transactions. 69:61-65
Single-crystalline CVD diamond films have excellent electrical and material properties with potential applications in high power, high voltage and high frequency applications that are out of reach for conventional semiconductor materials. For realiza
Publikováno v:
ECS Solid State Letters. 3:P65-P68
Diamond is a promising semiconductor material for high power, high voltage, high temperature and high frequency applications due to its remarkable material properties: it has the highest thermal conductivity, it is the hardest material, chemically in
Autor:
R. Jonsson, Nattakarn Suntornwipat, Anders Hallén, Markus Gabrysch, Kiran Kumar Kovi, F. Burmeister, Saman Majdi
Publikováno v:
Review of Scientific Instruments. 90:063903
Full investigation of deep defect states and impurities in wide-bandgap materials by employing commercial transient capacitance spectroscopy is a challenge, demanding very high temperatures. Therefore, a high-temperature deep-level transient spectros