Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Sam Vaziri"'
Autor:
Koosha Nassiri Nazif, Alwin Daus, Jiho Hong, Nayeun Lee, Sam Vaziri, Aravindh Kumar, Frederick Nitta, Michelle E. Chen, Siavash Kananian, Raisul Islam, Kwan-Ho Kim, Jin-Hong Park, Ada S. Y. Poon, Mark L. Brongersma, Eric Pop, Krishna C. Saraswat
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Ultrathin transition metal dichalcogenides (TMDs) hold promise for next-generation lightweight photovoltaics. Here, the authors demonstrate the first flexible high power-per-weight TMD solar cells with notably improved power conversion efficiency.
Externí odkaz:
https://doaj.org/article/a378d89d2a444e8486309ff54280a819
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 6, Pp 430-431 (2017)
We have just received the breaking news that our most recent Impact Factor (IF) count is now 3.14! up from the first measure at 1.5. This should really give us self-confidence, and encouragement to pursue even more pace towards quality papers. The ou
Externí odkaz:
https://doaj.org/article/72a09f88789943309fca0b7645fe9dad
Autor:
Yuxuan Cosmi Lin, Cheng-Ming Lin, Hung-Yu Chen, Sam Vaziri, Xinyu Bao, Wei-Yen Woon, Han Wang, Szuya Sandy Liao
Publikováno v:
IEEE Transactions on Electron Devices. 70:1454-1473
A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present experimental result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88938bbad1bd35006c928a7676e6a64e
http://arxiv.org/abs/2211.12418
http://arxiv.org/abs/2211.12418
Publikováno v:
The Journal of Physical Chemistry C. 125:21607-21613
We present vibrational properties of Franckeite, which is a naturally occurring van der Waals heterostructure consisting of two different semiconducting layers. Franckeite is a complex layered crystal composed of alternating SnS$_2$ like pseudohexago
Publikováno v:
Nano letters. 22(20)
Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also improve the
Autor:
Ryan W. Grady, Eric Pop, Cagil Koroglu, Sam Vaziri, Victoria Chen, Alwin Daus, Kevin Brenner, Hye Ryoung Lee, Kirstin Schauble, Connor S. Bailey
Publikováno v:
Nature Electronics. 4:495-501
Two-dimensional (2D) semiconducting transition metal dichalcogenides could be used to build high-performance flexible electronics. However, flexible field-effect transistors (FETs) based on such materials are typically fabricated with channel lengths
Autor:
Sanchit Deshmukh, Miguel Muñoz Rojo, Eilam Yalon, Sam Vaziri, Cagil Koroglu, Raisul Islam, Ricardo A. Iglesias, Krishna Saraswat, Eric Pop
Resistive random access memory (RRAM) is an important candidate for both digital, high-density data storage and for analog, neuromorphic computing. RRAM operation relies on the formation and rupture of nanoscale conductive filaments that carry enormo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c3f3b2f346d8e94aa6c6cbbecb6d138
http://hdl.handle.net/10261/307393
http://hdl.handle.net/10261/307393
Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also improve the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c980d6cf9afb6f351320aee616b195fb
Autor:
Michelle Chen, Ching-Hua Wang, Alvin Tang, Eric Pop, Linsen Li, Sam Vaziri, Victoria Chen, H-S Philip Wong, Connor J. McClellan
Publikováno v:
ACS nano. 15(5)
High-density memory arrays require selector devices, which enable selection of a specific memory cell within a memory array by suppressing leakage current through unselected cells. Such selector devices must have highly nonlinear current-voltage char