Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate

Autor: Haydn Wadsworth, S.J.N. Mitchell, Sam Strahan, Teng Hwang Tan, Ivan Andrew David Bailie, David McNeill

Publikováno v: Tan, T H, Mitchell, S J N, McNeill, D W, Wadsworth, H, Strahan, S & Bailie, I 2017, Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate . in International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings . Institute of Electrical and Electronics Engineers Inc., pp. 189-193, International Conference on Advances in Electrical, Electronic and Systems Engineering ICAEESE, Putrajaya, Malaysia, 14/11/2016 . https://doi.org/10.1109/ICAEES.2016.7888036

This paper reports on the enhanced piezoresistive effect in p-type silicon nanowires, fabricated using a top down approach. The silicon nanowire width is varied from 100 to 500nm with thickness of 200 nm and length of 9µm. It is found that the piezo

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https://pure.qub.ac.uk/en/publications/6f97950d-6242-41b8-99dc-6cb5a890645a