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Autor:
Farid Nemati, Nihar R. Mohapatra, W. P. Maszara, John J. Wuu, Scott Robins, Rajesh Chopra, V. Gopalakrishnan, Hyun-jin Cho, Kevin J. Yang, Rich Roy, Don R. Weiss, Rajesh Gupta, Joseph John Sundarraj, Sam Nakib
Publikováno v:
2010 International Electron Devices Meeting.
Thyristor Random Access Memory (T-RAM) is an ideal candidate for application as an embedded memory due to its substantially better density vs. performance tradeoff and logic process compatibility [1–3]. T-RAM memory embedded in a 32nm logic process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc0e3f3a2b974ba5e36f90d5ff0476ad
https://doi.org/10.1109/iedm.2010.5703345
https://doi.org/10.1109/iedm.2010.5703345
