Zobrazeno 1 - 10
of 159
pro vyhledávání: '"Sam Kyu Noh"'
Publikováno v:
Journal of the Korean Physical Society. 76:1096-1102
This paper reports the structural optimization and the temperature-dependent electrical characterization of GaAs single-junction solar cells (SJSCs) based on the p+-n-n+ junction structure. First, the effects of the p+-Al0.9Ga0.1As window layer were
Autor:
Jae Cheol Shin, Jun Oh Kim, Im Sik Han, Jong Su Kim, Sanjay Krishna, Sang Jun Lee, Sam Kyu Noh
Publikováno v:
Journal of Luminescence. 207:512-519
This study investigated the effects of the number of stacking layers (S) on the optical properties of InAs/InGaAs sub-monolayer quantum dot (SML-QD) infrared photodetectors by photoluminescence spectroscopy. As S was increased from two to six, the ro
Publikováno v:
Applied Science and Convergence Technology. 27:173-177
Publikováno v:
Korean Journal of Materials Research. 28:659-662
Autor:
Hyungsang Kim, Jungwon Kwak, Sangeun Cho, Sang Uck Lee, Eun Bi Nam, Jongmin Kim, SeungNam Cha, Sam Kyu Noh, Hyunsik Im, Yongcheol Jo, Ilhwan Ryu, Seongsu Hong, Sung-woo Kim, Jae-Joon Lee
Publikováno v:
Light, Science & Applications
Light: Science & Applications, Vol 9, Iss 1, Pp 1-9 (2020)
Light: Science & Applications, Vol 9, Iss 1, Pp 1-9 (2020)
Compared with solid scintillators, liquid scintillators have limited capability in dosimetry and radiography due to their relatively low light yields. Here, we report a new generation of highly efficient and low-cost liquid scintillators constructed
Publikováno v:
Journal of the Korean Physical Society. 73:833-840
Semiconductor quantum dots (QD) have been extensively applied in optical and optoelectronic devices because of their strong quantum confinement and bandgap tunability. Most research has focused on the design, material growth, and characterization of
Publikováno v:
New Physics: Sae Mulli. 67:425-431
Autor:
Chang-Lyoul Lee, Jong Su Kim, Sam Kyu Noh, Ryan P. Smith, Im Sik Han, Jae-Young Leem, Sang Jun Lee
Publikováno v:
Solar Energy Materials and Solar Cells. 155:70-78
The effects of quantum dot (QD) size on the optical and electrical properties of InAs/GaAs QD solar cells (QDSCs) were investigated. QDSCs with varying InAs QD size were fabricated by controlling the total InAs deposition thickness ( θ ) from 0 to 3
Autor:
Dong Woo Park, Joo-Hiuk Son, Seung Jae Oh, Hee Jun Shin, Hyeongmun Kim, Sam Kyu Noh, Jun Oh Kim
Publikováno v:
Current Applied Physics. 16:793-798
We investigated high-field terahertz (THz) responses and the nonlinear conductivities of n- and p-type GaAs thin films in the THz region. As the THz pulse intensity was increased to 59 μJ/cm 2 , the THz transmission of the n-type GaAs thin film was
Publikováno v:
Current Applied Physics. 16:587-592
To improve the efficiency of InAs quantum dot solar cells (QDSCs), we propose a QDSC structure with sub-monolayer (SML) QDs. The optical and electrical properties of Stranski–Krastanow (SK) QDs and SML-QDs embedded in dot-in-a-well (DWELL) were inv