Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sam Chance"'
Publikováno v:
Crystals, Vol 10, Iss 2, p 136 (2020)
We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits
Externí odkaz:
https://doaj.org/article/12dceadce0d14101a16aa6f9893569e8
Publikováno v:
Crystals, Vol 10, Iss 2, p 136 (2020)
Crystals
Volume 10
Issue 2
Crystals
Volume 10
Issue 2
We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits
Autor:
Brandon Whitaker, Kenneth Davis, Alandria Henderson, Sam Chance, Qunying Yuan, Zhigang Xiao, Joevonte Kimbrough, Fernando Camino, Zackary Duncan
Publikováno v:
2018 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO).
Semiconducting carbon nanotubes (CNTs) were dispersed ultrasonically in the Nmethyl-2-pyrrolidone (NMP) solvent, and were aligned and patterned with the alternating electric field-directed dielectrophoresis (DEP) method. CNT transistors were fabricat
Autor:
Bruce Bargmeyer, Anthony R. Cassandra, Sam Chance, Alfred de Jager, Bruno Felluga, Jerry Fowler, Manfred Grasserbauer, Palle Haastrup, Xuan Huang, Stefan Jensen, Ryan J. Lozado, Athanassios Papageorgiou, Greg Pitts, Paolo Plini, Stefan Poslad, Dominique Preux, François-Xavier Prunayre, Erika Rimaviciute, Ole Sortkjær, Michael Stjernholm, Guy Weets, Jørgen Würtz, Landong Zuo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1be37c172448ed50ecf794a25e0b8fb
https://doi.org/10.1016/b978-044452973-2/50003-8
https://doi.org/10.1016/b978-044452973-2/50003-8