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pro vyhledávání: '"Salviati, G. 1"'
Autor:
Rossi, F. 1, Lagonegro, P. 1, Negri, M. 1, Fabbri, F. 1, Salviati, G. 1, Alinovi, R. 2, Pinelli, S. 2, Ravanetti, F. 3, Cacchioli, A. 3, Bedogni, E. 4, Bigi, F. 4, Rimoldi, T. 5, Cristofolini, L. 5, Galli, C. 6, Smerieri, A. 6, Macaluso, G. M. 6
Publikováno v:
SILICON CARBIDE BIOTECHNOLOGY A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications, edited by Stephen E. Saddow, pp. 311–342. New York: Elsevier, 2016
info:cnr-pdr/source/autori:Rossi, F. 1; Lagonegro, P. 1; Negri, M. 1; Fabbri, F. 1; Salviati, G. 1; Alinovi, R. 2; Pinelli, S. 2; Ravanetti, F. 3; Cacchioli, A. 3; Bedogni, E. 4; Bigi, F. 4; Rimoldi, T. 5; Cristofolini, L. 5; Galli, C. 6; Smerieri, A. 6; Macaluso, G. M. 6/titolo:Chapter 10-Silicon Carbide-Based Nanowires for Biomedical Applications/titolo_volume:SILICON CARBIDE BIOTECHNOLOGY A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications/curatori_volume:Stephen E. Saddow/editore: /anno:2016
info:cnr-pdr/source/autori:Rossi, F. 1; Lagonegro, P. 1; Negri, M. 1; Fabbri, F. 1; Salviati, G. 1; Alinovi, R. 2; Pinelli, S. 2; Ravanetti, F. 3; Cacchioli, A. 3; Bedogni, E. 4; Bigi, F. 4; Rimoldi, T. 5; Cristofolini, L. 5; Galli, C. 6; Smerieri, A. 6; Macaluso, G. M. 6/titolo:Chapter 10-Silicon Carbide-Based Nanowires for Biomedical Applications/titolo_volume:SILICON CARBIDE BIOTECHNOLOGY A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications/curatori_volume:Stephen E. Saddow/editore: /anno:2016
This chapter presents an overview of the growth and optical properties (Section 10.2) and some in vitro applications of core-shell 3C-SiC-SiO2 NWs and bare SiC NWs. In Section 10.3 it was shown, by the analysis of cell proliferation, cell cycle progr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::01fcf89396238cb64e9354d0d09e8ba5
https://publications.cnr.it/doc/367821
https://publications.cnr.it/doc/367821
Publikováno v:
Characterization of Semiconductor Heterostructures and Nanostructures, 1st edition, edited by C. Lamberti, pp. 209–248. AMSTERDAM: ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, 2008
info:cnr-pdr/source/autori:Salviati G. 1; Rossi F. 1; Armani N. 1; Grillo V. 2; Lazzarini L. 1/titolo:Chapter 7: Power dependent cathodoluminescence in III-Nitrides heterostructures: From internal field screening to controlled band gap modulation/titolo_volume:Characterization of Semiconductor Heterostructures and Nanostructures, 1st edition/curatori_volume:C. Lamberti/editore: /anno:2008
info:cnr-pdr/source/autori:Salviati G. 1; Rossi F. 1; Armani N. 1; Grillo V. 2; Lazzarini L. 1/titolo:Chapter 7: Power dependent cathodoluminescence in III-Nitrides heterostructures: From internal field screening to controlled band gap modulation/titolo_volume:Characterization of Semiconductor Heterostructures and Nanostructures, 1st edition/curatori_volume:C. Lamberti/editore: /anno:2008
The aim of this chapter is to show mainly the potentiality of the cathodoluminescence (CL) technique and to what extent it can be applied in the study of III-nitrides heterostructures. A quite recent and unusual application of the CL technique, namel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::27563b3e09856d02c41b94931f548690