Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Salvatrice Scommegna"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 99-104 (2020)
This paper presents a new reliability threat that affects 3D-NAND Flash memories when a read operation is performed exiting from an idle state. In particular, a temporary large increase of the fail bits count is reported for the layers read as first
Externí odkaz:
https://doaj.org/article/9f5e9c5e9ca14ea3b767db5b44a4bb72
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 99-104 (2020)
This paper presents a new reliability threat that affects 3D-NAND Flash memories when a read operation is performed exiting from an idle state. In particular, a temporary large increase of the fail bits count is reported for the layers read as first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02e537bc3a80e54def13baf1c9ae28af
https://ieeexplore.ieee.org/document/8956089/
https://ieeexplore.ieee.org/document/8956089/
Autor:
Antonio Aldarese, Salvatrice Scommegna, Piero Olivo, Cristian Zambelli, Lorenzo Zuolo, Rino Micheloni
Publikováno v:
Electronics, Vol 10, Iss 1394, p 1394 (2021)
Electronics
Volume 10
Issue 12
Electronics
Volume 10
Issue 12
3D NAND Flash is the preferred storage medium for dense mass storage applications, including Solid State Drives and multimedia cards. Improving the latency of these systems is a mandatory task to narrow the gap between computing elements, such as CPU
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::582fc31d525573d6ac6c1a54bd477b81
https://www.mdpi.com/2079-9292/10/12/1394
https://www.mdpi.com/2079-9292/10/12/1394