Zobrazeno 1 - 10
of 108
pro vyhledávání: '"Salvatore Maria Amoroso"'
Autor:
Plamen Asenov, Ethan Kao, Victor Moroz, Salvatore Maria Amoroso, Xi-Wei Lin, Andrew R. Brown, Jaehyun Lee
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
This paper presents a TCAD-based analysis of DRAM retention time variability. Both statistical and process-induced variability are considered. We highlight that discrete dopant fluctuations play a fundamental role in determining the leakage trends ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89d3aae7447762c8439ae5d3913ce354
https://doi.org/10.1109/sispad54002.2021.9592560
https://doi.org/10.1109/sispad54002.2021.9592560
Autor:
Plamen Asenov, Salvatore Maria Amoroso, Fabiano Corsetti, Pieter Vancraeyveld, Xi-Wei Lin, Jaehyun Lee, Søren Smidstrup, Victor Moroz
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
This paper presents a multiscale physics-based approach for evaluating DRAM cell retention time including variable retention time effects. The flow goes from ab-initio DFT simulation to high-sigma SPICE analysis, allowing for the evaluation of the ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::910b07505cefacabce384b95a420cfb9
https://doi.org/10.1109/edtm50988.2021.9421060
https://doi.org/10.1109/edtm50988.2021.9421060
Autor:
Xi-Wei Lin, Thomas Yang, Plamen Asenov, Salvatore Maria Amoroso, Andrew R. Brown, Jaehyun Lee, Victor Moroz
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
This paper presents a TCAD-to-SPICE high-sigma analysis of DRAM write and retention performance. Both statistical and process-induced variability are taken into- account. We highlight that the interplay between discrete traps and discrete dopants is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::579043b490b473273c8ded6a9c46b6da
https://doi.org/10.23919/sispad49475.2020.9241690
https://doi.org/10.23919/sispad49475.2020.9241690
Autor:
Vihar P. Georgiev, C. Riddet, Ewan Towie, Fikru Adamu-Lema, Asen Asenov, Alexandru-Iustin Dochioiu, Douglas J. Paul, Donald A. MacLaren, Muhammad M. Mirza, Salvatore Maria Amoroso
Publikováno v:
IEEE Transactions on Nanotechnology
The experimental results from 8 nm diameter silicon nanowire junctionless field-effect transistors with gate lengths of 150 nm are presented that demonstrate on-currents up to 1.15 mA/ $\mu$ m for 1.0 V and 2.52 mA/ $\mu$ m for 1.8 V gate overdrive w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f8dfec33055008e7c76ca207f78c7ec
https://doi.org/10.1109/tnano.2017.2665691
https://doi.org/10.1109/tnano.2017.2665691
Autor:
Salvatore Maria Amoroso, Asen Asenov, Fikru Adamu-Lema, Toufik Sadi, Ewan Towie, Vihar P. Georgiev, Xingsheng Wang, Y. Wang, Andrew R. Brown, Talib Al-Ameri
Publikováno v:
Solid-State Electronics. 129:73-80
In this work we investigate the impact of quantum mechanical effects on the device performance of n-type silicon nanowire transistors (NWT) for possible future CMOS applications at the scaling limit. For the purpose of this paper, we created Si NWTs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2d0fc5e5cb298b4946a8ca1fb294a09
https://doi.org/10.1016/j.sse.2016.12.015
https://doi.org/10.1016/j.sse.2016.12.015
Autor:
Toufik Sadi, Andrew Pender, Aida Todri-Sanial, Jie Liang, R. Ramos, Ken Teo, Nalin Rupesinghe, Benjamin Uhlig, Vihar P. Georgiev, Asen Asenov, Bernd Gotsmann, Campbell Millar, G. Goncalves, Hanako Okuno, Marcus Widlicenus, Jean Dijon, Fabian Motzfeld, Salvatore Maria Amoroso, A. Dhavamani, Katharina Lilienthal, Andrew R. Brown
Publikováno v:
IEEE Circuits and Systems Magazine-New Series
IEEE Circuits and Systems Magazine-New Series-, Institute of Electrical and Electronics Engineers, 2017, 17 (2), pp.47-62. ⟨10.1109/MCAS.2017.2689538⟩
IEEE Circuits and Systems Magazine-New Series-, 2017, 17 (2), pp.47-62. ⟨10.1109/MCAS.2017.2689538⟩
IEEE Circuits and Systems Magazine
IEEE Circuits and Systems Magazine-New Series-, Institute of Electrical and Electronics Engineers, 2017, 17 (2), pp.47-62. ⟨10.1109/MCAS.2017.2689538⟩
IEEE Circuits and Systems Magazine-New Series-, 2017, 17 (2), pp.47-62. ⟨10.1109/MCAS.2017.2689538⟩
IEEE Circuits and Systems Magazine
International audience; This article is a review of the state-of-art carbon nanotube interconnects for Silicon application with respect to the recent literature. Amongst all the research on carbon nanotube interconnects, those discussed here cover 1)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5c6909a878f837e49fb62c47a31ab97
https://doi.org/10.1109/mcas.2017.2689538
https://doi.org/10.1109/mcas.2017.2689538
Autor:
Vihar P. Georgiev, Jaehyun Lee, Aida Todri-Sanial, Reetu R. Pandey, Liuyang Zhang, Asen Asenov, Jie Liang, R. Ramos, Campbell Millar, Hanako Okuno, Dipankar Kalita, Salvatore Maria Amoroso, Yuanqing Cheng, Jean Dijon, Rongmei Chen
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (11), pp.4963-4970. ⟨10.1109/TED.2018.2868424⟩
IEEE Transactions on Electron Devices, 2018, 65 (11), pp.4963-4970. ⟨10.1109/TED.2018.2868424⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (11), pp.4963-4970. ⟨10.1109/TED.2018.2868424⟩
IEEE Transactions on Electron Devices, 2018, 65 (11), pp.4963-4970. ⟨10.1109/TED.2018.2868424⟩
International audience; In this paper, the impact of charge transfer doping on the variability of multiwalled carbon nanotube (MWCNT) local interconnects is studied by experiments and simulations. We calculate the number of conducting channels of bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d8e087ae1717f9c66d278c087940f6b
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01879940/file/167769.pdf
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01879940/file/167769.pdf
Autor:
Campbell Millar, Hanako Okuno, Rongmei Chen, Asen Asenov, Dipankar Kalita, Aida Todri-Sanial, Yuanqing Cheng, Vihar P. Georgiev, Reetu R. Pandey, Jean Dijon, R. Ramos, Jaehyun Lee, Liuyang Zhang, Jie Liang, Salvatore Maria Amoroso
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (11), pp.4955-4962. ⟨10.1109/TED.2018.2868421⟩
IEEE Transactions on Electron Devices, 2018, 65 (11), pp.4955-4962. ⟨10.1109/TED.2018.2868421⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (11), pp.4955-4962. ⟨10.1109/TED.2018.2868421⟩
IEEE Transactions on Electron Devices, 2018, 65 (11), pp.4955-4962. ⟨10.1109/TED.2018.2868421⟩
International audience; In this paper, an enhanced compact model of multiwalled carbon nanotube (MWCNT) interconnects while considering defects and contact resistance is proposed. Based on the atomistic-level simulations, we have found that defect de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac435da122339a398d8783ed1dce41d5
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01879935
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01879935
Autor:
G. Goncalves, Katharina Lilienthal, Nicole Nagy, Vihar P. Georgiev, Benjamin Uhlig, Salvatore Maria Amoroso, Hanako Okuno, R. Liske, Aida Todri-Sanial, Jie Liang, Bingan Chen, Dipankar Kalita, Liping Wang, F. Koenemann, Rongmei Chen, Jean Dijon, Bernd Gotsmann, Asen Asenov, A. Dhavamani, Jaehyun Lee, R. Ramos, Reetu Raj Pandey
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC)
Here, we review and present current challenges and progress on Carbon Nanotube Integration for BEOL Interconnects as well as our recent results. Amongst all the research on carbon nanotube interconnects, those discussed here cover 1) improvement of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10e42b64ae5ee35a377b92f8757fa4a1
https://doi.org/10.1109/iitc.2018.8430411
https://doi.org/10.1109/iitc.2018.8430411
Autor:
Dipankar Kalita, Benjamin Uhlig, Liping Wang, Bernd Gotsmann, Campbell Millar, Nicole Nagy, Jean Dijon, Jaehyun Lee, Hanako Okuno, R. Ramos, G. Goncalves, Rongmei Chen, Bingan Chen, A. Dhavamani, Reetu Raj Pandey, Asen Asenov, Aida Todri-Sanial, Vihar P. Georgiev, Fabian Könemann, Salvatore Maria Amoroso, Jie Liang
Publikováno v:
21st Design, Automation & Test in Europe Conference & Exhibition
DATE: Design, Automation and Test in Europe
DATE: Design, Automation and Test in Europe, Mar 2018, Dresden, Germany. pp.937-942, ⟨10.23919/DATE.2018.8342144⟩
DATE 2018-21st Design, Automation and Test in Europe Conference and Exhibition
DATE 2018-21st Design, Automation and Test in Europe Conference and Exhibition, Mar 2018, Dresden, Germany. pp.937-942, ⟨10.23919/DATE.2018.8342144⟩
DATE
DATE: Design, Automation and Test in Europe
DATE: Design, Automation and Test in Europe, Mar 2018, Dresden, Germany. pp.937-942, ⟨10.23919/DATE.2018.8342144⟩
DATE 2018-21st Design, Automation and Test in Europe Conference and Exhibition
DATE 2018-21st Design, Automation and Test in Europe Conference and Exhibition, Mar 2018, Dresden, Germany. pp.937-942, ⟨10.23919/DATE.2018.8342144⟩
DATE
International audience; This article is a review of the current progress and results obtained in the European H2020 CONNECT project. Amongst all the research on carbon nanotube interconnects, those discussed here cover 1) process & growth of carbon n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca8e316053c94f26bee0e8aa896a47ab
https://eprints.gla.ac.uk/176546/1/176546.pdf
https://eprints.gla.ac.uk/176546/1/176546.pdf