Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Salvatore Ethan Panasci"'
Autor:
Salvatore Ethan Panasci, Ioannis Deretzis, Emanuela Schilirò, Antonino La Magna, Fabrizio Roccaforte, Antal Koos, Miklos Nemeth, Béla Pécz, Marco Cannas, Simonpietro Agnello, Filippo Giannazzo
Publikováno v:
Nanomaterials, Vol 14, Iss 2, p 133 (2024)
The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative
Externí odkaz:
https://doaj.org/article/a776ae412cb94623a73bafba73d36357
Autor:
Marianna Španková, Štefan Chromik, Edmund Dobročka, Lenka Pribusová Slušná, Marcel Talacko, Maroš Gregor, Béla Pécz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo
Publikováno v:
Nanomaterials, Vol 13, Iss 21, p 2837 (2023)
In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical char
Externí odkaz:
https://doaj.org/article/599297df99194f91b0d35d267721607d
Autor:
Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Antal Koos, Béla Pécz, Marianna Španková, Štefan Chromik
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 1, Pp n/a-n/a (2023)
Abstract In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS2 on 4H‐SiC(0001) surfaces with different doping levels, i.e., n− epitaxial doping (≈1016 cm−3) and n+ ion implantation doping (>1
Externí odkaz:
https://doaj.org/article/beba597e3a5747f7aa7169b6c82d0d34
Autor:
Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Antal Koos, Béla Pécz, Marianna Španková, Štefan Chromik
In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS2 on 4H-SiC(0001) surfaces with different doping levels, i.e., n− epitaxial doping (≈1016 cm−3) and n+ ion implantation doping (>1019 cm−3)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::090c0736ba7bae092b2cc4be95a81e62
https://hdl.handle.net/10447/579401
https://hdl.handle.net/10447/579401
Autor:
Salvatore Ethan Panasci, Antonino Alessi, Gianpiero Buscarino, Marco Cannas, Franco Mario Gelardi, Emanuela Schilirò, Filippo Giannazzo, Simonpietro Agnello
Publikováno v:
physica status solidi (a)
physica status solidi (a), 2022, pp.2200096. ⟨10.1002/pssa.202200096⟩
physica status solidi (a), 2022, pp.2200096. ⟨10.1002/pssa.202200096⟩
International audience; Mechanical exfoliation assisted by gold is applied to obtain good quality large lateral size single-layer MoS2. The effects of 2.5 MeV electron irradiation are investigated at room temperature on structural and electronic feat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd35c668aa08609c0c2ea5256b16bc91
https://hal.science/hal-03798399
https://hal.science/hal-03798399
Autor:
Salvatore Ethan, Panasci, Emanuela, Schilirò, Giuseppe, Greco, Marco, Cannas, Franco M, Gelardi, Simonpietro, Agnello, Fabrizio, Roccaforte, Filippo, Giannazzo
Publikováno v:
ACS applied materialsinterfaces. 13(26)
Gold-assisted mechanical exfoliation currently represents a promising method to separate ultralarge (centimeter scale) transition metal dichalcogenide (TMD) monolayers (1L) with excellent electronic and optical properties from the parent van der Waal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3be17a028e251b2d49e10f4fe5f8f545
https://pubmed.ncbi.nlm.nih.gov/35905500
https://pubmed.ncbi.nlm.nih.gov/35905500
Autor:
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Marco Cannas, Franco M. Gelardi, Simonpietro Agnello, Fabrizio Roccaforte, Filippo Giannazzo
Publikováno v:
ACS Applied Materials & Interfaces. 14:36287-36287
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94bd1456cce86570afaef3429133d7b2
https://doi.org/10.1021/acsami.2c12608
https://doi.org/10.1021/acsami.2c12608