Výsledky vyhledávání - "Salvato, Matteo"

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Stoichiometric Bi2Se3 Topological Insulator Ultra-Thin Films Obtained Through a New Fabrication Process for Optoelectronic Applications

Autor: Salvato, Matteo, Scagliotti, Mattia, De Crescenzi, Maurizio, Castrucci, Paola, De Matteis, Fabio, Crivellari, Michele, Cresi, Stefano Pelli, Catone, Daniele, Bauch, Thilo, Lombardi, Floriana

Publikováno v: Nanoscale 12, 12405 (2020)

A new fabrication process is developed for growing Bi2Se3 topological insulators in the form of nanowires/nanobelts and ultra-thin films. It consists of two consecutive procedures: first Bi2Se3 nanowires/nanobelts are deposited by standard catalyst f

Externí odkaz: http://arxiv.org/abs/2012.07025

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Topological insulator nanoribbon Josephson junctions: evidence for size effect in transport properties

Autor: Kunakova, Gunta, Surendran, Ananthu P., Montemurro, Domenico, Salvato, Matteo, Golubev, Dmitry, Andzane, Jana, Erts, Donats, Bauch, Thilo, Lombardi, Floriana

We have used Bi$_2$Se$_3$ nanoribbons, grown by catalyst-free Physical Vapor Deposition to fabricate high quality Josephson junctions with Al superconducting electrodes. In our devices we observe a pronounced reduction of the Josephson critical curre

Externí odkaz: http://arxiv.org/abs/2011.04787

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Scanning tunneling microscopy and Raman evidences of silicene nanosheets intercalated into graphite surface at room temperature

Autor: Kupchak, Ihor, Fabbri, Filippo, De Crescenzi, Maurizio, Scarselli, Manuela, Salvato, Matteo, Delise, Tiziano, Berbezier, Isabelle, Pulci, Olivia, Castrucci, Paola

Publikováno v: Nanoscale. 2019 Mar;11(13) 6145-6152

Highly oriented pyrolitic graphite (HOPG) is an inert substrate with a structural honeycomb lattice, well suited for the growth of two-dimensional (2D) silicene layer. It was reported that when Si atoms are deposited on HOPG surface at room temperatu

Externí odkaz: http://arxiv.org/abs/1910.01583

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