Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Salvador I. Garduno"'
Autor:
Angel Sacramento, Magaly Ramirez-Como, Victor S. Balderrama, Salvador I. Garduno, Magali Estrada, Lluis F. Marsal
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 413-420 (2020)
In this work, stability and degradation of inverted organic solar cells (iOSCs) partially manufactured under air environment are analyzed. The degradation of iOSCs fabricated with inkjet printed ZnO and with spin coated PFN as electron transport laye
Externí odkaz:
https://doaj.org/article/bc77041a622d41ec87c0145a733f1e2e
Autor:
Lluis F. Marsal, Salvador I. Garduno, Magali Estrada, Magaly Ramirez-Como, Angel Sacramento, Victor S. Balderrama
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 413-420 (2020)
In this work, stability and degradation of inverted organic solar cells (iOSCs) partially manufactured under air environment are analyzed. The degradation of iOSCs fabricated with inkjet printed ZnO and with spin coated PFN as electron transport laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b29adee1c7675cadc83e7253ccb69c90
https://ieeexplore.ieee.org/document/8963720/
https://ieeexplore.ieee.org/document/8963720/
Publikováno v:
2021 IEEE Latin America Electron Devices Conference (LAEDC).
In this paper we present high mobility thin film transistors, using hafnium oxide as dielectric and amorphous Hafnium-Indium-Zinc Oxide as semiconductor, both deposited by radio frequency magnetron sputtering at room temperature. Devices operated wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a96abfcc254d649236faac4618c6f32a
https://doi.org/10.1109/laedc51812.2021.9437929
https://doi.org/10.1109/laedc51812.2021.9437929
Publikováno v:
2020 IEEE Latin America Electron Devices Conference (LAEDC).
The effect of thermal annealing at low temperature (≤200°C) on some structural, optical, and electrical properties of tin (Sn) layers, deposited at room temperature by direct current magnetron sputtering in an argon and oxygen reactive plasma, was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4426debda78a1a11146090b976fd9a9d
https://doi.org/10.1109/laedc49063.2020.9073260
https://doi.org/10.1109/laedc49063.2020.9073260
Publikováno v:
2020 IEEE Latin America Electron Devices Conference (LAEDC).
In this work, it is described in detail the inkjet printing process for zinc oxide (ZnO) deposition in well-defined patterns, without using photolithography and etching procedures. This is achieved through the suitable control of the inkjet printer s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e24911a48a70544e5ce8635e29aaa6ef
https://doi.org/10.1109/laedc49063.2020.9073472
https://doi.org/10.1109/laedc49063.2020.9073472
Autor:
Salvador I. Garduno, Lluis F. Marsal, Magali Estrada, Victor S. Balderrama, Angel Sacramento, Magaly Ramirez-Como
Publikováno v:
2019 Latin American Electron Devices Conference (LAEDC).
In this study, we analyze the stability and degradation of inverted organic solar cells (iOSCs) partially fabricated under air environment. It is compared the degradation of iOSCs manufactured with PFN against inkjet printed ZnO as electron transport
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f9c5eed64e5cef3cadc0b3c3801d71c
https://doi.org/10.1109/laed.2019.8714734
https://doi.org/10.1109/laed.2019.8714734
Autor:
Josep Ferré-Borrull, Edith Osorio, Salvador I. Garduno, Lluis F. Marsal, Magali Estrada, José G. Sánchez, Victor S. Balderrama, Aurelien Viterisi, Josep Pallarès
Publikováno v:
RSC advances. 8(24)
In this paper, we demonstrate that zinc oxide (ZnO) layers deposited by inkjet printing (IJP) can be successfully applied to the low-temperature fabrication of efficient inverted polymer solar cells (i-PSCs). The effects of ZnO layers deposited by IJ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::479075df993682e774d73056507b64e1
https://pubmed.ncbi.nlm.nih.gov/35542512
https://pubmed.ncbi.nlm.nih.gov/35542512
Autor:
Salvador I. Garduno, Magali Estrada, Denis Flandre, Valeriya Kilchytska, Joaquín Alvarado, Antonio Cerdeira
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 27:846-862
Because different conduction mechanisms can dominate the gate and drain/source leakage currents, mainly depending on the insulating materials used as gate dielectric, the dimensions of the gate structure, and the transistor operation regime, we propo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4701e7aa731dc64e754b9a160680734
https://doi.org/10.1002/jnm.1988
https://doi.org/10.1002/jnm.1988
Autor:
Francois Lime, Ghader Darbandy, Salvador I. Garduno, Benjamin Iniguez, Magali Estrada, Antonio Cerdeira
Publikováno v:
Solid-State Electronics
Repositori Institucional de la Universitat Rovira i Virgili
Universitat Rovira i virgili (URV)
Repositori Institucional de la Universitat Rovira i Virgili
Universitat Rovira i virgili (URV)
10.1016/j.sse.2012.05.006 This paper presents a compact gate leakage current partitioning model for nanoscale Double Gate (DG) MOSFETs, using analytical models of the direct tunneling gate leakage current. Gate leakage current becomes important and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c9d2ac2bc9db3d3b12ea3d89b87fdd6
https://doi.org/10.1016/j.sse.2012.05.006
https://doi.org/10.1016/j.sse.2012.05.006
Autor:
J. I. Mejia, M. E. Rivas, I. Hernandez, M. A. Quevedo, Salvador I. Garduno, Magali Estrada, Antonio Cerdeira
Publikováno v:
2015 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC).
Bias stress study is presented in Metal-Insulator-Semiconductor structure using Indium-Gallium-Zinc oxide film on top of HfO2, deposited by pulsed laser deposition and atomic layer deposition, respectively. The produced effect on this interface is an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da63d557f157a34b375eb6cd7bf368b5
https://doi.org/10.1109/ropec.2015.7395135
https://doi.org/10.1109/ropec.2015.7395135