A strained SiGe layer heterojunction bipolar phototransistor for short-range opto-microwave applications

Autor: Polleux, J.L., Rumelhard, C., Paszkiewicz, L., Salset, J., Chennafi, N., Gonzalez, C., Thuret, J., Moutier, F., Billabert, A.L., Sommez, E., Schmacher, H.

Publikováno v: MWP 2003 International Topical Meeting on Microwave Photonics, 2003.
MWP 2003 International Topical Meeting on Microwave Photonics, 2003., Oct 1999, Budapest, France. ⟨10.1109/MWP.2003.1422840⟩

A strained-SiGe heterojunction bipolar phototransistor is presented for the first time. Theoretical demonstration of the device is recalled. Practical measurements at 940 nm are presented. A dc phototransistor mode responsivity of 1.49 A/W is achieve

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab67416aad756ecb81f2b0e95653227c
https://doi.org/10.1109/mwp.2003.1422840

A Large-Signal Millimeter-wave InP/GaInAs Phototransistor Model: Method of Parameters Extraction and Maximum Gain Investigation.

Autor: Polleux, J.L., Paszkiewicz, L., Salset, J., Chennafi, N., Gonzalez, C., Rumelhard, C., Thuret, J.

Publikováno v: 1999 29th European Microwave Conference; 1999, Issue 1, p48-51, 4p

A versatile and inexpensive electronic system for a high resolution NMR spectrometer.

Autor: Kan, S., Gonord, P., Duret, C., Salset, J., Vibet, C.

Publikováno v: Review of Scientific Instruments; Dec1973, Vol. 44 Issue 12, p1725-1733, 9p