Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Salonidou A"'
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2007 38(1):89-93
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 38:89-93
The paper focuses on the peculiarities of charging/discharging kinetics and write/erase (W/E) window formation in nanocrystal metal-oxide semiconductor (MOS) non-volatile memory (NVM) structures prepared by low-pressure chemical vapor deposition (LPC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b55e232699597c3fab0edc3d2175eb1
https://doi.org/10.1016/j.physe.2006.12.034
https://doi.org/10.1016/j.physe.2006.12.034
Autor:
Salonidou A, Nassiopoulou Ag
Publikováno v:
Journal of Nanoscience and Nanotechnology. 7:368-373
It was demonstrated in the literature that the use of self-aligned doubly-stacked Si dots improves retention characteristics of a nanocrystal memory. In this paper, we show that a similar effect may be obtained by using two distinct layers of silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aebaac84c60ffaa2ce9372c92e1fcecd
https://doi.org/10.1166/jnn.2007.18037
https://doi.org/10.1166/jnn.2007.18037
Publikováno v:
Journal of Physics: Conference Series. 10:31-34
Silicon nanocrystals memory cells of an n-MOSFET type were fabricated and tested, based on a silicon nanocrystal gate MOS structure fabricated by low-pressure chemical vapor deposition (LPCVD) of amorphous silicon (?-Si) on a tunneling silicon dioxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8f56236b83a6649d05dba502be02226
https://doi.org/10.1088/1742-6596/10/1/008
https://doi.org/10.1088/1742-6596/10/1/008
Autor:
A Salonidou, Vassilios Ioannou-Sougleridis, Konstantinos P. Giannakopoulos, Androula G. Nassiopoulou, E. Tsoi, A. Travlos
Publikováno v:
Nanotechnology. 15:1233-1239
Two-dimensional arrays of silicon nanocrystals embedded in ultrathin SiO2 layers for application in silicon nanocrystal memories were fabricated by a three-step process: (a) growth of a tunnelling silicon oxide, (b) low pressure chemical vapour depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c735b6de84d0afc66817c966f00cb548
https://doi.org/10.1088/0957-4484/15/9/021
https://doi.org/10.1088/0957-4484/15/9/021
Autor:
A G, Nassiopoulou, A, Salonidou
Publikováno v:
Journal of nanoscience and nanotechnology. 7(1)
It was demonstrated in the literature that the use of self-aligned doubly-stacked Si dots improves retention characteristics of a nanocrystal memory. In this paper, we show that a similar effect may be obtained by using two distinct layers of silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1548cfb310b8981ba4f3dded6b855703
https://pubmed.ncbi.nlm.nih.gov/17455506
https://pubmed.ncbi.nlm.nih.gov/17455506
Publikováno v:
International Journal of Nanotechnology. 6:18
Silicon and germanuim nanocrystal memories show important advantages over conventional floating gate non-volatile memories. To fully exploit these advantages, it is essential to achieve accurate control of nanocrystal size and arial density, as well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::191be7ae89b6c1798e8f69f3b6aa9436
https://doi.org/10.1504/ijnt.2009.021705
https://doi.org/10.1504/ijnt.2009.021705
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