Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Saloni Chaurasia"'
Autor:
Vibhor Jain, John Pekarik, Crystal Kenney, Judson Holt, Chris Durcan, Jeffrey B. Johnson, Sudesh Saroop, Mona Nafari, Vaibhav Ruparelia, Santosh Kumar Gedela, Prateek Kumar Sharma, Viorel Ontalus, Shweta Khokale, Saloni Chaurasia, Venkata Vanukuru, Alvin Joseph
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e900bacd47b5bbc82eb3954edf4ae348
https://doi.org/10.1109/iedm45625.2022.10019417
https://doi.org/10.1109/iedm45625.2022.10019417
Publikováno v:
AIP Advances, Vol 8, Iss 7, Pp 075010-075010-6 (2018)
A wafer-scale method to obtain epitaxial germanium (Ge) on crystalline silicon (Si) using liquid-phase-crystallization (LPC) is presented. The technique provides a simple yet versatile method to grow epitaxial germanium on silicon with any crystallog
Externí odkaz:
https://doaj.org/article/c51947d5a01c477393297edda8a489f1
Autor:
John Pekarik, Vibhor Jain, Crystal Kenney, Judson Holt, Shweta Khokale, Sudesh Saroop, Jeffrey B. Johnson, Kenneth Stein, Viorel Ontalus, Christopher Durcan, Mona Nafari, Tayel Nesheiwat, Sangameshwar Saudari, Elahe Yarmoghaddam, Saloni Chaurasia, Alvin Joseph
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4450292de96dca135af04c6ff49b9939
https://doi.org/10.1109/bcicts50416.2021.9682454
https://doi.org/10.1109/bcicts50416.2021.9682454
Autor:
Jack Pekarik, Vibhor Jain, Crystal Kenney, Judson Holt, Shweta Khokale, Sudesh Saroop, Jeffrey Johnson, Kenneth Stein, Viorel Ontalus, Christopher Durcan, Mona Nafari, Tayel Nesheiwat, Sangameshwar Saudari, Elahe Yarmoghaddam, Saloni Chaurasia, Alvin Joseph
Publikováno v:
ECS Meeting Abstracts. :1196-1196
D-band (110-170GHz) spectrum is gaining attention for various applications, including 6G mm-Wave, sub-THz sensing, and radar. These systems require lattice spacing for antenna elements at sub-1mm and a very low loss signal path from antenna to integr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::764a00a3300d239b378af2746dff1722
https://doi.org/10.1149/ma2022-02321196mtgabs
https://doi.org/10.1149/ma2022-02321196mtgabs
Autor:
Saloni Chaurasia
Publikováno v:
The Pre-Collegiate Global Health Review.
As the clock ticks, more and more people are falling victim to COVID-19, and scientists are racing against time to find treatment and prevention strategies. But what’s stopping them? The answer comes from two primary problems. Firstly, coronaviruse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0185ab43580ff72e1562662523ca29f7
https://doi.org/10.51627/pghr.2020.04.00007
https://doi.org/10.51627/pghr.2020.04.00007
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
Germanium is considered an important electronic material which can serve both as a photo-voltaic material as well as a substrate for low cost III-V solar cells on silicon. However, growth of high quality germanium on silicon is challenging due to 4%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c126c99c681709d08955610d1c5ff4
https://doi.org/10.1109/pvsc40753.2019.8981348
https://doi.org/10.1109/pvsc40753.2019.8981348
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
Germanium integration on silicon is required for fabricating high efficiency III-V low-cost solar cells on silicon. In this work, we present a single step thermal annealing of amorphous germanium films as a method of monolithic integration of epitaxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7456d9483d4aec6babaf82ef44629437
https://doi.org/10.1109/pvsc.2018.8548031
https://doi.org/10.1109/pvsc.2018.8548031
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
High-efficiency III-V solar cells on low-cost substrates such as steel, are limited because a) the overlying III-V semiconductor stack gets contaminated with iron, b) it is not easy to deposit crystalline Ge thin-films on amorphous steel substrates.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fe935d86ae71f6dc37d5856cea4f02a
https://doi.org/10.1109/pvsc.2017.8366359
https://doi.org/10.1109/pvsc.2017.8366359
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Integration of high quality germanium on silicon is prerequisite for fabricating high efficiency low-cost III-V solar cells on silicon. In this work, we present a method of monolithic integration of epitaxial germanium on crystalline silicon wafers w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17a185e64ccd628a78a5e79f80a69445
https://doi.org/10.1109/pvsc.2017.8366360
https://doi.org/10.1109/pvsc.2017.8366360
Publikováno v:
NEMS
A novel parallel plate capacitive tactile sensor design has been proposed which for the same deflection of the top electrode shows manifold improvement in sensitivity over present designs. Using a dielectric droplet leads to a simultaneous change in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c7654ba10f1346e34fad9ec59b8975d
https://doi.org/10.1109/nems.2017.8017056
https://doi.org/10.1109/nems.2017.8017056