Výsledky vyhledávání - "Salmer, Georges"

Application of GaAs power devices to very - high - frequency and high - efficiency DC to DC power converters

Autor: Ajram, S., Kozlowski, Romain, Van de Velde, Jean Claude, Salmer, Georges

Publikováno v: Ajram, S. ; Kozlowski, Romain ; Van de Velde, Jean Claude ; Salmer, Georges (1996) Application of GaAs power devices to very-high-frequency and high-efficiency DC to DC power converters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

In this paper a novel possibility to obtain dc-to-dc converters with high efficiency using GaAs MESFET switches is provided. A comparison with standard MOSFET is presented and solutions for reactive element, diode, and driver are proposed. Finally we

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III-V complementary HIGFET technology for low power microwave and high speed/low power digital integrated circuits

Autor: Fawaz, Hussein, Thiery, Jean-Francois, Linh, Nuyen, Mollot, Francis, Pesant, Jean-Claude, Francois, Marc, Muller, Michel, Delos, E., Salmer, Georges

Publikováno v: Fawaz, Hussein ; Thiery, Jean-Francois ; Linh, Nuyen ; Mollot, Francis ; Pesant, Jean-Claude ; Francois, Marc ; Muller, Michel ; Delos, E. ; Salmer, Georges (1996) III-V complementary HIGFET technology for low power microwave and high speed/low power digital integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

A self aligned complementary HIGFET technology has been developed for high speed/low power digital and microwave analog applications. The process uses 9 lithographic steps including two level of interconnect metal. Typical transconductances of 290 mS

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-low temperature GaAs/GaInP FET: device technology and characterization

Autor: Theron, Didier, Boudart, B., Zaknoune, Mohamed, Mollot, Francis, Druelle, Y., Gérard, Henri, Salmer, Georges, Lipka, M., Westphalen, R., Kohn, Erhard

Publikováno v: Workshop on non-stoichiometric GaAs and related materials
Workshop on non-stoichiometric GaAs and related materials, 1996, Santa Barbara, United States

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::57b66c491d8ca4294a8211deeef868b7
https://hal.archives-ouvertes.fr/hal-01654286

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Analysis and optimization of single quantum well MODFETs

Autor: Shawki, Tarek, Salmer, Georges

Publikováno v: Shawki, Tarek ; Salmer, Georges (1990) Analysis and optimization of single quantum well MODFETs. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Based on 2D hydrodynanuc energy model which features transient simulation of degenerate hot electron transport in submicron MODFETs, we present a detailed analysis of single quantum well (SQW) AlGaAs/GaAs/AlGaAs MODFETs which are proposed to enhanc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d529051bfe6f215307f0627078ae327e
http://amsacta.unibo.it/2022/

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Akademický článek

Ultrahigh Frequency DC-to-DC Converters Using GaAs Power Switches.

Autor: Ajram, Sami, Salmer, Georges

Publikováno v: IEEE Transactions on Power Electronics. Sep2001, Vol. 16 Issue 5, p594. 9p. 4 Black and White Photographs, 6 Diagrams, 4 Charts, 12 Graphs.