Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Sallie Hose"'
Autor:
Ton Pinili, Manny Ramos, Ginbert Manalo, Guy Brizar, Koen Matthijs, Frederik Colle, Johan DeGreve, Petr Kocourek, Bill Cowell, John Jensen, John McGlone, Sallie Hose, Jeff Gambino
Publikováno v:
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ae4ca420ccbcaeb0cc76f1f96df295b
https://doi.org/10.1109/ipfa55383.2022.9915763
https://doi.org/10.1109/ipfa55383.2022.9915763
Physical and Electrical Characterization of Deep Trench Isolation in Bulk Silicon and SOI Substrates
Autor:
Sallie Hose, Lahcen Boukhanfra, Lan Su, Masaichi Eda, Rick Jerome, Weize Chen, Jaroslav Pjencak, Thomas F. Long, Johan Janssens, Moshe Agam, Kenn Bates
Publikováno v:
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this paper the authors present case studies for physical and electrical characterization of Deep Trench Isolation (DTI) in bulk silicon and SOI substrates. For bulk silicon, experimental results demonstrate how the effectiveness of the isolation i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee709b0dc0ae9329ba2354d27b3c85ae
https://doi.org/10.1109/asmc51741.2021.9435655
https://doi.org/10.1109/asmc51741.2021.9435655
Autor:
D. Price, Dustin Z. Austin, John F. Conley, Sallie Hose, Derryl Allman, Melanie A. Jenkins, Charles L. Dezelah
Publikováno v:
Chemistry of Materials. 29:1107-1115
Atomic layer deposition (ALD) processes are reported for ruthenium (Ru) and ruthenium oxide (RuO2) using a zero-oxidation state liquid precursor, η4-2,3-dimethylbutadiene ruthenium tricarbonyl [Ru(DMBD)(CO)3]. Both ALD Ru and RuO2 films were deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bb53f60a737920b9534bc1d13ce3627
https://doi.org/10.1021/acs.chemmater.6b04251
https://doi.org/10.1021/acs.chemmater.6b04251
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Methods for detecting contamination with native transistor probes are reviewed. This review is based on experience which was accumulated during development of multilevel epitaxial (EPI) high voltage DMOS process technologies including Deep Trench Iso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77330143b8abd26ca85e0b96dfb84f37
https://doi.org/10.1109/asmc.2017.7969198
https://doi.org/10.1109/asmc.2017.7969198
Autor:
R. Takada, J.P. Gambino, Oli Whear, Santosh Menon, Y. Kanuma, M. Lu, D. Daniel, Y. Watanabe, A. Suhwanov, J. Guo, D. Price, G. Piatt, B. Greenwood, Sallie Hose, Lieyi Sheng
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Two unique gate oxide failure mechanisms are associated with deep trench processes for a 0.18 μm power semiconductor device. One failure mode is a “mini-LOCOS” defect, that is due to inadvertent oxidation of Si in the active area during deep tre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::674b72d55209b94dd49b11d59771f2d2
https://doi.org/10.1109/asmc.2017.7969258
https://doi.org/10.1109/asmc.2017.7969258
Autor:
Dustin Z. Austin, Sallie Hose, Melanie A. Jenkins, John F. Conley, David J. Price, Derryl Allman, Charles L. Dezelah
Publikováno v:
Chemistry of Materials. 30:8983-8984
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ef88ef3a59233f7f116ca7661a43780
https://doi.org/10.1021/acs.chemmater.8b04816
https://doi.org/10.1021/acs.chemmater.8b04816
Publikováno v:
IEEE Electron Device Letters. 36:496-498
Metal–insulator–insulator–metal (MIIM) capacitors with bilayers of Al2O3 and SiO2 are deposited at 200 °C via plasma enhanced atomic layer deposition. Employing the cancelling effect between the positive quadratic voltage coefficient of capaci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78914fb7c48dccf24fd363a920b31028
https://doi.org/10.1109/led.2015.2412685
https://doi.org/10.1109/led.2015.2412685
Autor:
Sallie Hose, D. Price, J.P. Gambino, Y. Kanuma, Agajan Suwhanov, Y. Watanabe, B. Greenwood, Oli Whear
Publikováno v:
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
X-Ray Diffraction Imaging (XRDI) is used to non-destructively image strain in Si associated with deep trench isolation in high voltage devices. The XRD images show that there is dark contrast associated with deep trenches which is indicative of strai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb436231c50736c2e93fd3b572421825
https://doi.org/10.1109/ipfa.2016.7564309
https://doi.org/10.1109/ipfa.2016.7564309
Autor:
Thierry Coffi Herve Yao, Yutaka Ota, Agajan Suwhanov, Tracy Myers, Sallie Hose, Matt Comard, Moshe Agam
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
This paper presents the challenges of integrating 70V and 45V lateral DMOS transistor modules into a 0.18um base line process. This integration is achieved with minimal impact on baseline process and circuit IP's. Multi-epitaxial stack and Deep Trenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32ccee166aa5756b683866391a3b7bc4
https://doi.org/10.1109/asmc.2014.6846954
https://doi.org/10.1109/asmc.2014.6846954
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 32:01A113
Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe2iPr)3 and H2O at deposition temperatures between 90 and 270 °C on Si3N4, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffractio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09593f8ae9601f603f52f1b9ed7dcca9
https://doi.org/10.1116/1.4840835
https://doi.org/10.1116/1.4840835