Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions

Autor: Vangelista, S., Mantovan, R., Cocco, S., Lamperti, A., Salicio, O., Fanciulli, M.

Publikováno v: In Thin Solid Films 1 May 2012 520(14):4617-4621

Chemical vapor deposition of chalcogenide materials for phase-change memories

Autor: Abrutis, A., Plausinaitiene, V., Skapas, M., Wiemer, C., Salicio, O., Longo, M., Pirovano, A., Siegel, J., Gawelda, W., Rushworth, S., Giesen, C.

Publikováno v: In Microelectronic Engineering 2008 85(12):2338-2341

Plasma ALD strategies for area selective deposition

Autor: Vallee, C., Bonvalot, M., Gonon, P., Bsiesy, A., Pelissier, B., Chevolleau, T., Yeghoyan, T., Jaffal, M., Belahcen, S., Vallat, R., Chacker, A., Pisi, Y., Zakhtser, A., Pesce, V., Lefèvreand , G., Salicio, O., Gassilloud, R., Possémé, N.

Publikováno v: 73rd Gaseous Electronics Conference GEC 2020
73rd Gaseous Electronics Conference GEC 2020, 2020, virtuelle, United States

International audience; The scaling of transistor is still on the road only thanks to the introduction of complex multiple patterning steps that are more and more expensive and time consuming. Therefore, microelectronic industry needs new solutions a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::980b8cf64df8dfb673acfc38c33abcb6
https://hal.univ-grenoble-alpes.fr/hal-03449640

Characterization of crystalline MOCVD SrTiO 3 films on SiO 2/Si(100)

Autor: Sibai, A., Lhostis, S., Rozier, Y., Salicio, O., Amtablian, S., Dubois, C., Legrand, J., Sénateur, J.P., Audier, M., Hubert-Pfalzgraff, L., Dubourdieu, C., Ducroquet, F.

Publikováno v: In Microelectronics Reliability 2005 45(5):941-944

In situ and ex situ monitoring and metrology for the development of a selective deposition process

Autor: Vallee, C., Gassilloud, R., Pelissier, B., Vallat, R., Pesce, V., Salicio, O., Grehl, T., Brüner, P., Posseme, N., Gonon, P., Bsiesy, A.

Publikováno v: 18th International Conference on Atomic layer Deposition (ALD2018)
18th International Conference on Atomic layer Deposition (ALD2018), Jul 2018, Incheon, South Korea

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::aaca9b121646b97af18dd74f10a20729
https://hal.univ-grenoble-alpes.fr/hal-01959042