Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Salguero, T."'
We report on the field-effect modulation of the charge-density-wave quantum condensate in the top-gated heterostructure devices implemented with quasi-one-dimensional NbS$_3$ nanowire channels and quasi-two-dimensional h-BN gate dielectric layers. Th
Externí odkaz:
http://arxiv.org/abs/2310.19027
Autor:
Geremew, A., Rumyantsev, S., Kargar, F., Debnath, B., Nosek, A., Bloodgood, M., Bockrath, M., Salguero, T., Lake, R. K., Balandin, A. A.
Publikováno v:
ACS Nano, 13, 7231 (2019)
We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The
Externí odkaz:
http://arxiv.org/abs/1903.06050
Autor:
Geremew, A., Kargar, F., Zhang, E. X., Zhao, S. E., Aytan, E., Bloodgood, M. A., Salguero, T. T., Rumyantsev, S., Fedoseyev, A., Fleetwood, D. M., Balandin, A. A.
Publikováno v:
Nanoscale, 11, 8380 - 8386 (2019)
Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities. Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malf
Externí odkaz:
http://arxiv.org/abs/1901.00551
Autor:
Liu, G., Zhang, E. X., Liang, C. D., Bloodgood, M. A., Salguero, T. T., Fleetwood, D. M., Balandin, A. A.
Publikováno v:
EEE Electron Device Letters, 38, 1724 (2017)
The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in
Externí odkaz:
http://arxiv.org/abs/1712.01354
Publikováno v:
Nano Letters, 15, 2965 (2015)
Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 K and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The C-CDW
Externí odkaz:
http://arxiv.org/abs/1503.06891
Autor:
Renteria, J., Samnakay, R., Jiang, C., Pope, T. R., Goli, P., Yan, Z., Wickramaratne, D., Salguero, T. T., Khitun, A. G., Lake, R. K., Balandin, A. A.
Publikováno v:
J. Appl. Phys., 115, 034305 (2014)
We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals
Externí odkaz:
http://arxiv.org/abs/1312.6863
Autor:
Yan, Z., Jiang, C., Pope, T. R., Tsang, C. F., Stickney, J. L., Goli, P., Renteria, J., Salguero, T. T., Balandin, A. A.
Publikováno v:
Journal of Applied Physics, 114, 204301 (2013)
We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe2) obtained via the graphene-like mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from th
Externí odkaz:
http://arxiv.org/abs/1311.2226
Akademický článek
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Autor:
Liu, G, Zhang, E. X., Liang, C. D., Bloodgood, M. A., Salguero, T. T., Fleetwood, D. M., Balandin, A. A.
Publikováno v:
Liu, G; Zhang, E. X.; Liang, C. D.; Bloodgood, M. A.; Salguero, T. T.; Fleetwood, D. M.; et al.(2017). Total-Ionizing-Dose Effects on ThresholdSwitching in 1T-TaS2 ChargeDensity Wave Devices. IEEE ELECTRON DEVICE LETTERS, 38(12). UC Office of the President: UC Lab Fees Research Program (LFRP); a funding opportunity through UC Research Initiatives (UCRI). Retrieved from: http://www.escholarship.org/uc/item/2n81b23m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::b0893620ac4dff93e418130af10f9efc
http://www.escholarship.org/uc/item/2n81b23m
http://www.escholarship.org/uc/item/2n81b23m
Autor:
Renteria, J., Samnakay, R., Jiang, C., Pope, T. R., Goli, P., Yan, Z., Wickramaratne, D., Salguero, T. T., Khitun, A. G., Lake, R. K., Balandin, A. A.
Publikováno v:
Journal of Applied Physics; 2014, Vol. 115 Issue 3, p1-6, 6p, 2 Color Photographs, 6 Graphs